Search results for "transistor"
Gen III GaN FET reduces EMI and gate noise immunity for quieter switching
Power transistors, based on Transphorm’s third generation of GaN technology exhibit lower EMI and increased gate noise immunity. The company believes it offers the only JEDEC and AEC-Q101-qualified GaN FETs in the market today.
1W DC/DC converter powers GaN drivers
The isolated 1W DC/DC converter series RP-xx06S designed by RECOM and now available at Rutronik power the latest GaN (Gallium Nitride) drivers. The converters meet the demanding requirements of GaN drivers with a 5200VDC isolation and a low isolation capacitance of less than 10pF.
FETs deliver industry’s highest-performance upgrade path
Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ replacement solution for many existing IGBT, Si-MOSFET and SiC-MOSFET parts, with no cha...
GaN transistor is x20 smaller than silicon option
Efficient Power Conversion (EPC) claims that its 350V eGaN power transistor is 20 times smaller than the comparable silicon. This makes it suitable for use in multi-level converters, for EV charging, solar power inverters and motor drives.
A fast solution for electronic view finders and wearables
The small video displays, OLED Micro-displays from Sony Semiconductor Solutions are for the reproduction of images that are well-suited for electronic view finders, and head-mounted devices. These very thin displays exhibit high brightness, operate at low power and are made from a solid Si-wafer substrate.
Turning silicon photonics into a competitive asset for the electronics industry
VTT Technical Research Centre of Finland, together with Tampere University of Technology (TUT), has accelerated the development and commercialisation of silicon photonics products as part of the renewal of the Finnish electronics industry. With the help of silicon photonics, companies can develop increasingly compact, more efficient and more affordable products, where optical signals are used for such purposes as precise measuring, laser imaging ...
Panasonic showcases GaN and SiC MOSFET advances
GaN and SiC MOSFET technologies for industrial and automotive use were a focal point of the Panasonic Industry Europe (PIEU) display at PCIM 2018.
IGBT power interfaces with integrated electro-optic conversion
A range of miniaturised power interfaces with integrated electro-optical conversion has been developed by HARTING which enables customers to save time and money by combining electrical connectivity and optical transmission in the same module.The new interfaces are designed for use with powerful electric drives controlled by IGBT (insulated gate bipolar transistor) semiconductor elements. In order to achieve the necessary galvanic isolation betwee...
Linear regulators deliver constant LED current in compact packages
Diodes Incorporated has introduced the AL5890 linear constant-current regulator developed to provide simple and more cost-effective solutions to driving LED strings from an off-line or DC power supply.Available in a range of packages, the small form-factor of the AL5890 makes it suitable for any LED application where a lower BoM cost and sizes are important.
Reference design covers variety of topologies
Availability and full design support capabilities for a new reference design from RECOM Power (RECOM) have been announced by distributor Richardson RFPD. The R-REF01-HB reference design consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors.