Search results for "gallium nitride"

Nano-electronics research centre imec has announced that it is extending its Gallium Nitride-on-Silicon (GaN-on-Si) R&D programme, and is now offering joint research on GaN-on-Si 200mm epitaxy and enhancement mode device technology.

To move the world toward sustainability, scientists are continuing to explore ways to use the power of sunlight to make fuels and generate electricity. Now scientists have developed a way in which to use light to drive battery power safely. The battery, reported in theJournal of Physical Chemistry C, uses light and titanium nitride for the anode.

A team of materials scientists at the UCLA Henry Samueli School of Engineering and Applied Science is exploring ways to create tough ceramics, a long sought-after class of materials that would be exceptionally hard, capable of withstanding extremely high temperatures and less prone to corrosion than metals, but still have the ability to become dented or deformed without fracturing, a property called ductility. In other words, a ceramic that bends...

GaN Systems last week showcased the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors on Booth 4D18 at PCIM Asia in Shanghai. Based on three core proprietary technologies, the GS65516T GaN high-power enhancement-mode device boasts the highest current capability on the market at 60A.

The “Luftstrom” research project investigates how batteries in EVs can be charged more efficiently. Luftstrom (English: Airstream) will help accelerate the conversion to climate-friendly mobility. Twelve partners in the German automotive sector, its supply industry and the sciences are collaborating on this project for the next three years. The use of new power semiconductors is expected to reduce losses during charging and, ultimatel...

Designed for high-power, surface-mount RF applications, the RCP series of thick film chip resistors from Vishay Intertechnology is now available in the compact 0505, 0603 and 2512 case sizes. The devices offer very high thermal conductivity for power ratings up to 22W with active temperature control.

GaN Systems has confirmed what it calls the ‘world’s smallest’ 650V, 15A gallium nitride transistor, in the wake of the 2015 PCIM conference in Nürnberg, Germany. With a footprint of just 5.0x6.5mm, the GS66504B - one of a family of 650V devices that spans 7 to 200A - is 50% smaller than competing devices.

An innovative silicon nitride coating for ceramic components is now available from Morgan Advanced Materials, across a variety of its oxide and non-oxide ceramic materials.

The NPT2022, launched by MACOM at IMS in Phoenix, is a wideband transistor optimised for DC-2GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process. The device supports CW, pulsed and linear operation, boasting output levels up to 100W or 50dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900MHz when operated at 50V.

An enhancement-mode power switch, claimed to feature the highest current capability on the market at 60A, has been released by GaN Systems. The GS65516T features the company’s proprietary topside cooling configuration, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques.