Search results for "gallium nitride"
Precision chip resistors are sulfur & moisture resistant
Resistant to the effects of both sulfur and moisture, a series of thin film precision chip resistors have been unveiled by Stackpole Electronics. While thin film nichrome resistors typically have difficulty withstanding high humidity environments under low power, Stackpole's proprietary materials and processing protects the nichrome element and performs as well under high humidity testing as much more expensive technologies such as tantalum nitri...
Coatings will limit contamination in crucibles
Morgan Advanced Materials has made two additions to its range of crucible coatings for the foundry sector. PRO and STAR Coatings have been formulated to reduce impurities and so optimise the quality of the molten metal and the final cast product.
Wideband transistor is optimised for DC-2.7GHz operation
A wideband transistor optimised for DC-2.7GHz operation has been introduced by M/A-COM Technology Solutions. The NPT2024, which uses MACOM’s proprietary Gallium Nitride on Silicon (GaN on Si) process, is now sampling. The device supports CW, pulsed and linear operation, boasting output levels up to 200W.
Red, amber, yellow LEDs deliver high luminous density
The VLD series LEDs from Vishay Intertechnology are in stock at distributor Mouser Electronics. These new red, amber, and yellow LEDs feature ultra-bright aluminum indium gallium phosphide (AllnGaP)-on-silicon chip technology to deliver luminous intensity up to 35,500 mcd.
GaN-on-SiC RF transistors pave the way to 5G
Infineon Technologies has introduced the first devices in a family of Gallium Nitride on Silicon Carbide (GaN-on-SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s GaN portfolio, the devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters.
FET packs power into a small footprint for wireless transfer
The EPC2039 is compact and competitively priced for wireless power transfer and other high frequency applications, says Efficient Power Conversion (EPC).
LM5113 enhancement mode GaN FET half-bridge driver demo
Min demonstrates TI's LM5113 5A, 100V half-bridge gate driver for Enhancement mode Gallium Nitride (eGaN) FETs and ultra-efficient, small-footprint power supplies, class D audio amplifiers, hard-switched and high frequency circuits.
Infineon's high-frequency radar chips nominated for award
The high-frequency radar chip team at Infineon has been nominated for the Deutscher Zukunftspreis 2015 (German Future Award), the German President's Award for Innovation in Science and Technology. Radar systems in cars make a major contribution to improving road safety, measuring distance and speed in relation to other vehicles in order to give drivers early warning and trigger braking in emergencies.
The hot topic facing high power LEDs
There is a new approach to thermal management in HP LED substrates, explains Giles Humpston, Cambridge Nanotherm
Nanowires boost solar fuel cell efficiency
Researchers at Eindhoven University of Technology (TU/e) and FOM Foundation have presented a very promising prototype of a solar cell that produces fuel rather than electricity in the Nature Communications journal. The Gallium Phosphide (GaP) enables the solar cell to produce hydrogen gas, a clean fuel, from liquid water.