Search results for "transistor"
Smallest switches current with a single atom in solid electrolyte
Being „The Research University in the HelmholtzAssociation“, KIT creates and imparts knowledge for the society and the environment. It is the objective to make significant contributions to the global challenges in the fields of energy, mobility and information. For this, about 9,300 employees cooperate in a broad range of disciplines in natural sciences, engineering sciences, economics, and the humanities and social sciences.
Rugged 250W transistor delivers 69% energy efficiency
Ampleon has announced an addition to its line-up of high power LDMOS RF transistors suitable for use in Continuous Wave (CW) RF energy applications. TheBLC2425M10LS250power transistor is highly efficient, achieving up to 69% efficiency and is capable of providing up to 250W output power in the 2,400-2,500 MHz frequency range.
Accelerating 3nm process development with DTCO innovations
Synopsys has announced a collaboration with IBM to apply design technology co-optimisation (DTCO) to the pathfinding of new semiconductor process technologies for the 3nm process node and beyond. DTCO is a methodology for efficiently evaluating and down-selecting new transistor architectures, materials and other process technology innovations using design metrics, starting with an early pathfinding phase before wafers become available.
POL regulators support wide array of functions
Power by Linear LTM46xx µModule power products from Analog Devices, are a series of point-of-load (POL) regulators designed to reduce solution size and deliver reliable power circuit performance. The LTM46xx µModule regulators support step-down (buck), step-up (boost), and step-down and step-up (buck-boost) conversion with a wide array of function and feature combinations.
Output power of gallium-nitride transistors tripled
A crystal structure that both increases current and voltage in Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band, has been announced by Fujitsu Limited and Fujitsu Laboratories.
Latest innovations driven by EV technologies
Technical innovations in power module packaging are mainly driven by the challenging system requirements of the booming EV/HEV industry and the entrance of WBG materials. The companies Yole Développement (Yole) and System Plus consulting, both part of Yole Group of Companies, have proposed, two dedicated analysis'.
Digital tool suite achieves GLOBALFOUNDRIES 22FDX
It has been announced by Cadence Design Systems that its full-flow digital tool suite has achieved certification for the GLOBALFOUNDRIES (GF) 22FDX process technology. The GF certification process was completed using the Cadence Tensilica Fusion F1 DSP, which targets Internet of Things (IoT) and wearables applications.
Isolated dual-channel gate driver with dead time
The UCC21222-Q1 device is an isolated dual channel gate driver from Texas Instruments with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.
For those about to rock: Improved amplifier power module
It has been announced that ICEpower’s new amplifier power module is designed for guitar amplifiers, bass amplifiers and subwoofers. In the past, large tubes and heavy transformers were an integral part of a guitar amplifier. The sound of heavily clipped and overdriven tube amplifiers has defined the rock genre for generations.
Growth in silicon carbide power sales is good news for EVs
Manufacturer of silicon carbide (SiC) power semiconductors,UnitedSiC hasopened an office in Shenzhen, China, and appointed Henry Jiang as Senior Sales Manager for the South China region. Jiang joins the company from STMicroelectronics, where he was the team leader of the power division.