Search results for "gallium nitride"

EPFL researchers have developed conductive tracks that can be bent and stretched up to four times their original length. They could be used in artificial skin, connected clothing and on-body sensors. Conductive tracks are usually hard printed on a board. But those recently developed at EPFL are altogether different: they are almost as flexible as rubber and can be stretched up to four times their original length and in all directions.

Graphene, the two-dimensional powerhouse, packs extreme durability, electrical conductivity, and transparency into a one-atom-thick sheet of carbon. Despite being heralded as a breakthrough 'wonder material', graphene has been slow to leap into commercial and industrial products and processes.

Fujitsu Limited and Fujitsu Laboratories have announced the development of a GaN High-Electron Mobility Transistor (HEMT) power amplifier for use in W-band (75-110GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Physicists at the Technical University of Munich (TUM) have developed a nanolaser, a thousand times thinner than a human hair. Thanks to an ingenious process, the nanowire lasers grow right on a silicon chip, making it possible to produce high-performance photonic components cost-effectively. This will pave the way for fast and efficient data processing with light in the future.

Nanogaps could enable new types of microprocessors and make a whole range of biosensors possible, and now researchers at KTH Royal Institute of Technology have published a scalable method using nanocracks for creating nanogaps that are only a few atom layers wide.Valentin Dubois, a researcher at KTH's Department of Micro and Nanosystems, says the new method improves on established ways to achieve gaps in conductive materials — in this case,...

Arthur Schaldenbrand, Cadence Design Systems, discusses some of the power design challenges that have emerged over recent years as well as some promising new technologies to address them.

At last week’s IEEE International Electron Devices Meeting 2015, world-leading nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimised low dispersion buffer designs.

Designed to enable power systems engineers quickly evaluate the efficiency achieved with 200V GaN (gallium nitride) transistors in class-E amplifiers, current-mode class D, and push-pull converters operating up to 30MHz, Efficient Power Conversion (EPC) has released three GaN-based differential mode development boards.

Microsemi Corporation has announced a high power Monolithic Microwave Surface Mount (MMSM) series-shunt SP2T PIN diode reflective switch, the MPS2R10-606. The device is optimised for High Frequency (HF),Very High Frequency (VHF) and Ultrahigh Frequency (UHF) high power Transmit/Receive (T/R) switching in applications such as Magnetic Resonance Imaging (MRI) receive arrays and first responder, military, aviation and marine radio communications. Th...

The GS66508T enhancement mode transistor and the associated EVBHB half-bridge evaluation board from GaN System is now being shipped by Mouser Electronics. The GS66508T is a 650V enhancement mode gallium nitride (GaN) power switch with top-cooled configuration. The fully functional GS66508T-EVBHB board is easily configured into any half bridge-based topology, including synchronous boost or buck conversion, as well as pulsed switching to evaluate t...