Search results for "gallium nitride"

Heat flow in atomically thin materials is strongly directional and now research from A*STAR indicates that this property could be employed to improve the performance of computer hard drives. Hard drives store data by using magnetic fields to change the properties of a small section of a magnetically sensitive material. Decreasing the size of this section increases the drive's capacity but also increases the size of the magnetic field required for...

Osram Opto Semiconductors’ research lab has considerably improved the luminous efficacy of its high-power LEDs by reducing the unwanted droop effect at high currents. This development was made possible by optimised epitaxial growth processes. At a current density of 3A/mm², the quantum efficiency of the LEDs is now a full 7.5% above the previous level.

Wolfspeed has released a 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13th, 2016 in Clearwater Beach, Fla. Designed for up to 8GHz operation, the 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT.

Transmitting the contents of a conventional DVD in under ten seconds by radio transmission is incredibly fast – and a new world record in wireless data transmission. With a data rate of 6 Gb per second over a distance of 37 km, a collaborative project with the participation of researchers from the University of Stuttgart and the Fraunhofer Institute for Applied Solid State Physics IAF exceeded the state of the art by a factor of 10.

According to Indium Corporation, its germanium reclaim and recycle program enables customers to increase their return on materials by providing credit for diverting spent germanium from the waste stream.Germanium, used in things like the production of fiber optic cables, optical lenses and wafers, and catalysts in polyethylene (plastic) production, is typically not completely consumed during the process.

Imec has announced a strategic partnership on GaN-on-Si (Gallium Nitride-on-Silicon) technology with IQE, the global leader in designing and manufacturing advanced semiconductor wafer products and services. GaN technology offers faster switching-power devices with higher breakdown voltage and lower on-resistance than silicon, making it an ideal material for advanced power electronic components.

How to design ‘well-behaved’ high side gate drive circuits, by Paul Lee, Murata Power Solutions. The MGJ series, for example, has options for +15 or +20V. IGBTs and GaN MOSFETS will be fully ‘on’ with 15V drive but typical SiC MOSFETS may need closer to 20V for full enhancement.

TT Electronics has announced an extension to its WIN series range of precision chip resistors with improved tolerances and TCRs. The minimum ohmic value is now halved to 5Ω and a tolerance of ±0.05% and TCR of ±15ppm/°C is now included. In addition, WIN is now available with optional SnPb terminations, allowing its use in high reliability designs where RoHS termination finishes are not required.This represents the first in...

Scientists at the Department of Energy's Oak Ridge National Laboratory synthesised a stack of atomically thin monolayers of two lattice-mismatched semiconductors. One, gallium selenide, is a "p-type" semiconductor, rich in charge carriers called "holes." The other, molybdenum diselenide, is an "n-type" semiconductor, rich in electron charge carriers.

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems. Wolfspeed’s proven GaN-on-SiC fabrication processes have demonstrated industry-leading reliability and performance, delivering more than 100bn total hours of field operation with a best-in-class FIT rate of less than-5-per bn device hours for discrete ...