Search results for "SiC MOSFET"

The TPS22992x product family consists of two devices: TPS22992 and TPS22992S. Each device is a single-channel load switch with an 8.7-mΩ power MOSFET designed to maximize power density in applications up to 5.5 V and 6 A. A configurable rise time provides flexibility for power sequencing and minimizes inrush current for high capacitance loads

AT PCIM Europe, Efficient Power Conversion Corporation announced the expansion of a selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET.

STMicroelectronics and MACOM Technology Solutions Holdings Inc. have announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes.

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags

The TPS22992x product family consists of two devices: TPS22992 and TPS22992S. Each device is a single-channel load switch with an 8.7-mΩ power MOSFET designed to maximize power density in applications up to 5.5 V and 6 A.

Two announcements for the automotive industry were made by Nexperia at PCIM Europe. The company announced additions to its ASFET (application specific MOSFET) portfolio and additions to the rectifiers available in its 'copper clip' packaging.

Diodes Incorporated's DIODES AP61300Q and DIODES AP61302Q synchronous buck converters are 3A-rated devices that have a wide input voltage range of 2.4V to 5.5V. They address the need for automotive point-of-loads that are more streamlined and exhibit increased efficiency levels. They are optimised for use in vehicles’ telematics, ADAS, power and infotainment systems, as well as instrumentation clusters.

At PCIM Europe, Qorvo has announced a next-generation series of 1200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with figures of merit in on-resistance.

Qorvo (originally called UnitedSiC), a leading provider of core RF and power solutions, has announced a next-generation series of 1,200V SiC FETs (silicon carbide field effect transistors) with industry-leading figures of merit in on-resistance.

At PCIM Europe (10-12 May 2022) UnitedSiC announced the fourth generation of is 1200V SiC FETs based on its Cascode technology. It also announced that since its acquisition by Qorvo, the company will be known as Qorvo from the end of this year.