Search results for "Toshiba"
New Photocoupler Provides High Breakdown Voltage And Current Amplification Over Extended Temperature Range
Toshiba Electronics Europe has announced a new photocoupler for use with programmable logic controllers (PLCs), I/O interface boards and home appliances. With a current transfer ratio of 1000% (min) and a minimum rated isolation voltage of 3750Vrms the TLP187 is ideal for programmable controllers that utilise 100VDC output modules.
Toshiba Launches World’s Largest Capacity Automotive-Grade HDDs
Toshiba Electronics Europe has launched a new series of automotive-grade hard disk drives (HDDs) to meet the increasingly demanding storage needs of the automotive sector. The MQ01AAD032C is the flagship model and houses 320GB[1] of storage in a 2.5 inch (6.4cm) HDD casing. The MQ01AADxxxC range also consists of the MQ01AAD020C (200GB) and the MQ01AAD010C (100GB) HDDs.
Toshiba Motor Driver IC Realises Zero Current In Standby Mode
Toshiba Corporation announce that it has today introduced a full-bridge DC motor driver IC, TB67H301FTG for use in consumer and industrial equipment, including printers, vending machines and amusement machines. The IC incorporates a standby function that realizes zero power supply current in standby mode. Mass production starts today.
Toshiba MCU Integrates Measurement And Communication Capabilities
Toshiba announce a new ARM Cortex M3-based microcontroller that combines large capacity memory with a range of serial interfaces, integrating measurement and communication systems into a single chip. The TMPM36BF10FG comes equipped with 258 kByte of SRAM and 1 MByte of ROM. TMPM36BF10FG is ideal for controlling complex systems that involve large software and data sets.
Toshiba Announces NFC LSI For Mobile Payments
Toshiba reveal today that it has launched an NFC controller LSI (CLF) T6NE2XBG for secure mobile payments via proximity wireless communication. Mass production is scheduled to start in October. The market for mobile payments, using smartphones and other mobile devices in transactions, is growing. The T6NE2XBG enables multiple concurrent connections with three different secure elements, allowing manufacturers to design NFC-enabled applications bef...
Toshiba Launches Next-Generation Solid State Hybrid Drives
Toshiba Electronics Europe has launched its next-generation solid state hybrid drives that combine SSD-like performance with large HDD capacities. The new drives squeeze 8GiB of NAND storage and up to 500GB of HDD storage into a svelte 2.5-inch form factor with 7.0mm height, ideal for high-performance and ultrathin notebooks, and slim line PCs.
Toshiba Develops World’s First Multi-level-cell Structure MROM cell
Toshiba Corporation today announced that the development of the world's first MROM cell to offer improved cell current characteristics without any increase in cell size. This advance was achieved by adopting a multi-level-cell structure, which also secures high speed operation.
Toshiba Announce Development Of MOSFETs For RF/Analog Applications
Toshiba have today revealed the development of a high power gain transistor using a CMOS compatible process. The transistor efficiently reduces power consumption in high frequency RF/analog front-end application. Details will be presented on June 12 at the 2013 Symposia on VLSI Technology and Circuits, held in Kyoto, Japan, June 11-14, 2013.
Smaller Can Be Better: Toshiba’s Latest Photocouplers Offer Increased Voltage Isolation In A Smaller Package
Toshiba Electronics Europe has announced two new Triac-output photocouplers that provide reinforced voltage and electrical noise insulation in an ultra-miniature SO6 double-mould package. The TLP265J and TLP266J have a minimum rated isolation voltage of 3750Vrms and have been designed for use in triac drivers, programmable controllers, AC output modules and solid-state relays used in home appliances and white goods.
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
Toshiba America Electronic Components today announced the addition of a 200W C-Band gallium nitride semiconductor High Electron Mobility Transistor to its power amplifier product family. The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.