Search results for "SiC MOSFET"
TLVM13630 ACTIVE High-density, 3-V to 36-V input, 1-V to 6-V output, 3-A step-down power module
The TLVM13630 synchronous buck power module is a highly integrated 36-V, 3-A DC/DC solution that combines power MOSFETs, a shielded inductor, and passives in an Enhanced HotRod™ QFN package. The module has pins for VIN and VOUT located at the corners of the package for optimized input and output capacitor layout placement.
Graphite products for use in the semiconductor industry
SGL Carbon will significantly increase capacities for the production of graphite products for the semiconductor industry by 2024.
Industry all-stars take stage at International Cyber Expo’s Global Cyber Summit
Nineteen Group, organisers of International Cyber Expo, announced the speaker line-up for its annual Global Cyber Summit sponsored this year by Snyk, and hosted at Olympia London on the 27thand 28thof September 2022.
A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs
This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.
SiC FETs suit 800 V bus architectures
In stock at distributor Mouser Electronics are the UF4C and UF4SC 1200 V silicon carbide (SiC) FETs from UnitedSiC (now Qorvo).
NI signs deal to transform supply chain
Test and measurement company NI is modernising its supply chain through a deal with Kinaxis, a supply chain management software provider.
Nexperia NextPower 80/100V MOSFETs
NexperiaNextPower 80/100V MOSFETs are recommended for high-efficiency switching and high-reliability applications. The NextPower MOSFETs feature 50% lower RDS(on)and a strong avalanche energy rating. The devices are ideally suited for power supply, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters
PowerDI8080-Packaged MOSFET
PowerDI8080-Packaged MOSFET from Diodes Incorporated increases power density in modern automotive applications
A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs
This application note provides guidance on how to design the power supply topology of NCP5156x family isolated gate drivers when using Silicon Carbide (SiC) MOSFETs.As new power transistors, such as SiC MOSFETs, are being increasingly used in power electronics systems, it has become necessary to use special drivers. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get t...
5.5-V, 6-A, 10-mΩ load switch with adjustable rise time and adjustable quick output discharge
The TPS22992x product family consists of two devices: TPS22992 and TPS22992S. Each device is a single-channel load switch with an 8.7-mΩ power MOSFET designed to maximize power density in applications up to 5.5 V and 6 A. A configurable rise time provides flexibility for power sequencing and minimizes inrush current for high capacitance loads