Search results for "SiC MOSFET"

Cutting both on-resistance and switching loss, while optimising body-diode properties, the STMicroelectronics 40V MOSFETs, STL320N4LF8 and STL325N4LF8AG, save energy and ensure low noise in circuits for power conversion, motor control, and power distribution.

The NIO ES7 is the first SUV application of the ‘Design for AD’ ethos and includes smart hardware, algorithms and applications including an AR/VR compatible digital cockpit.

Infineon's CoolSiC MOSFETs use an optimised trench semiconductor process that enables both the lowest losses in the application and the highest reliability in operation.

Toshiba has added five MOSFET gate-driver ICs in the TCK42xG series, suitable for a wide range of applications including battery powered, consumer and industrial equipment.

SICK launches its next-gen, intelligent and powerful WLL80 Fibre Optic Sensors, designed for simple configuration and versatile integration into machinery and conveyor systems in electronics production, wherever rapid, high accuracy detection is required in confined spaces.

Expanded InnoSwitch3 family slashes component count and boosts efficiency in EV and industrial applications

Halo Microelectronics a maker of analog and power management integrated circuits enabling energy-efficient smart systems, announced the release of its HL7090.

Yole Développement (Yole) and System Plus Consulting have analysed the compound semiconductor industry in-depth for some years now.

The TPS54360B is a 60-V, 3.5-A, step-down regulator with an integrated high side MOSFET. Current mode control provides simple external compensation and flexible component selection. A low ripple pulse skip mode reduces the no-load supply current to 146 µA. Shutdown supply current is reduced to 2 µA when the enable pin is pulled low.

The TLVM13630 synchronous buck power module is a highly integrated 36-V, 3-A DC/DC solution that combines power MOSFETs, a shielded inductor, and passives in an Enhanced HotRod™ QFN package. The module has pins for VIN and VOUT located at the corners of the package for optimized input and output capacitor layout placement.