Search results for "SiC MOSFET"

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732 has up to ±10A peak source and sink current.

During this year’s PCIM Europe in Nuremberg, Germany, June 11th – 13th, ROHM will present its new power semiconductor solutions with a special focus on wide bandgap devices.

SemiQ, a designer, developer, and global supplier of superior SiC solutions for ultra-efficient, high-performance, and high-voltage applications, will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA 25–29 February 2024.

The UCC53x0 is a family of single-channel, isolated gate drivers designed to drive MOSFETs, IGBTs, SiC MOSFETs, and GaN FETs (UCC5350SBD).

Taiwanese manufacturer Bruckewell is now also offering various GaN solutions for digital power supplies with QR (quasi resonant) and LLC topologies.

Due to the complexity of growing quality silicon carbide (SiC) crystals, manufacturers need help obtaining sufficient systems to meet global production targets

Navitas has announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500.

Vishay has introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package.

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low RDS(on). Infineon Technologiesaddresses this challenge with the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the RDS(on)of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET.

Littelfuse has announce the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.