Search results for "gallium nitride"

At electronica 2016 in Munich, Germany, Texas Instruments will showcase innovation focused on the future of industrial automation and automotive technologies.Take a closer look at sensor communications with wired technologies like IO-Link and wireless technologies such as Bluetooth low energy, and explore how TI’s Gallium Nitride (GaN) technology significantly increases the efficiency in variable speed motor drives.

Scientists at the Department of Energy's Oak Ridge National Laboratory are the first to harness a STEM to directly write tiny patterns in metallic "ink," forming features in liquid that are finer than half the width of a human hair.The automated process is controlled by weaving a STEM instrument's electron beam through a liquid-filled cell to spur deposition of metal onto a silicon microchip. The patterns created are "nanoscale," or on the size s...

An international collaborative of scientists has devised a method to control the number of optical solitons in microresonators, which underlie modern photonics. Photonics is a dynamically developing field of modern physics. Microresonators are basic structural elements of photonics, an integral part of almost all sophisticated optical and microwave devices. In fact, resonators are circular light traps. Microresonators are currently used for laser...

A theory developed by the late Stanford professor and Nobel laureate Felix Bloch suggested that a specially structured material that allowed electrons to oscillate in a particular way might be able to conduct terahertzsignals.Now, decades after Bloch's theory, Stanford physicists may have developed materials that enable these theorised oscillations, someday allowing for improvements in technologies from solar cells to airport scanners. The group ...

A newly discovered method for making 2D materials could lead to extraordinary properties, particularly in a class of materials called nitrides, say the Penn State materials scientists who discovered the process. This first-ever growth of 2D gallium nitride using graphene encapsulation could lead to applications in deep ultraviolet lasers, next-gen electronics and sensors.

Scientists from imec have announced that they have fabricated a thin-film solar module stack made up of perovskite and CIGS (Copper Indium Gallium Selenide) with a conversion efficiency of 17.8%. For the first time, this tandem module surpasses the highest efficiencies of separate perovskite and CIGS modules.

A provider of highly integrated power management, AC/DC power conversion, Solid State Lighting (SSL) and Bluetooth low energy technology, Dialog Semiconductor, have announced it is demonstrating its first Gallium Nitride (GaN) power IC product offering, using Taiwan Semiconductor Manufacturing Corporation’s (TSMCs) 650V GaN-on-Silicon process technology.

The UltraCMOS PE45361 is a monolithic 100W power limiter from Peregrine Semiconductor. Representing the next generation in Peregrine’s power limiter product family, the PE45361 builds on the success of the 50W UltraCMOS power limiters and adds higher pulsed power handling, a lower limiting threshold and positive threshold control.

Peregrine Semiconductor has launched the UltraCMOS PE42525 and PE426525, said to be the industry’s first RF SOI switches to operate up to 60GHz. These two switches set a new standard for RF SOI at microwave frequencies and significantly extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology.

Jason Chou, Area Technical Manager for Taiwan and Kenny Chiong, Senior Technical Support Engineer, from Indium Corporation will present at 2016 Electronics Packaging Technology Conference (EPTC) on 30thNovember - 3rdDecember in Suntec City, Singapore.