Search results for "SiC MOSFET"

SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defence, and power electronics, has completed a Series A financing round totalling 125 MSEK (12M Euro).

UCC14240-Q1 is a high isolation voltage DC/DC module designed to provide power to IGBT or SiC gate drivers. The high-accuracy output voltages provide better channel enhancement for higher system efficiency without over-stressing the power device gate.

Many high-efficiency power supply implementations could use either an active clamp flyback (ACF) converter or an LLC switcher IC to meet design goals. It depends on the final requirement, explains Aditya Kulkarni, Senior Product Marketing Manager, Power Integrations.

A low loss true 2kV SiC MOSFET was announced at PCIM Europe in Nuremberg. Based on Infineon’s CoolSiC technology, it is a new blocking voltage class, said Peter Friedrichs, vice president, silicon carbide at Infineon.

Diodes Incorporated (Diodes) has introduced a new versatile single-channel high-side power switch.

Battery-powered appliances, one of the industry’s fastest-growing segments, require energy-efficient, robust, and cost-effective battery charging. For this reason, Infineon Technologies AG extends its offering of AC-DC controller ICs by introducing the ICC80QSG single-stage PWM (pulse-width modulation) controller for flyback topologies.

The VIPER31 series of high-voltage converters are the latest additions to the VIPerPlus family from STMicroelectronics.

This article will first introduce the common-mode transient immunity (CMTI) specification and its importance in a system.We will discuss a new isolated sigma-delta modulator family, its performance, and how it improves and facilitates system current measurement accuracy, especially for offset error and offset error drift. Finally, a recommended circuit solution will be introduced. Isolated modulators are widely used in motors/inverters where high...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has signed an agreement with IFP Energies nouvelles (IFPEN), a major French public research and training organisation in the fields of energy, transport and the environment, to develop an innovative automotive inverter using advanced GaN devices.

Optimised performance, efficiency, and reliability in high-voltagepower suppliesneed to be combined with reduced bill-of-material (BOM) count and cost, as well as lower design efforts.