Search results for "gallium nitride"

The commercial production of thin-film photovoltaic systems with semiconductors made of Copper, Indium, Gallium and Selenium (CIGS) is on the verge of a breakthrough.

A study, affiliated with South Korea's UNIST, has introduced a new treatment for skeletal system injuries, using stem cells from human bone marrow and a carbon material with photocatalytic properties.A recent study, affiliated with UNIST has developed a method of repairing injured bone using stem cells from human bone marrow and a carbon material with photocatalytic properties, which could lead to powerful treatments for skeletal system injuries,...

Sandia National Laboratories researchers have shown it's possible to make transistors and diodes from advanced semiconductor materials that could perform much better than silicon, the workhorse of the modern electronics world.The breakthrough work takes a step toward more compact and efficient power electronics, which in turn could improve everything from consumer electronics to electrical grids.

QPD gallium nitride (GaN) radio frequency (RF) transistors from Qorvo are now in stock at Mouser Electronics. Built on Qorvo's high-performance GaN on silicon carbide (SiC) technology, these high-electron-mobility transistors (HEMTs) with a single-stage matched power amplifier transistor offer a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications.

Stackpole Electronics has announced the release of their new RTAN series chip resistors. The AEC-qualified RTAN is a Tantalum Nitride precision thin film resistor that is impervious to moisture corrosion. This type of thin film technology passes biased humidity testing at 85°C, 85% relative humidity, and ten percent rated power for more than 1,000 hours with little shift in resistance.

Gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging from Transphorm are available for immediate shipment from Digi-Key Electronics. Transphorm is a global semiconductor company that develops the industry’s only JEDEC-qualified GaN FETs for high-voltage power conversion applications. The company’s product portfolio includes 600V and 650V discretes for power levels up to 4.5kW.

SPIE Photonics West 2017 will see Micronor and Optocon AG debuting as they have collaborated to create the FOTEMP1-OEM-MNT; a low cost, small form factor, single channel signal conditioner that seamlessly integrates Fibre Optic Temperature Sensing into any industrial control system, medical instrumentation or other OEM design.

A current-sense amplifier for in-line motor phase current measurement that improves overall motor efficiency, compared to existing current-sense amplifiers has been introduced by Texas Instruments (TI).

Infineon Technologies and Cree have announced that Infineon has entered into a definitive agreement to acquire the Wolfspeed Power and RF division ('Wolfspeed') of Cree. The deal also includes the related SiC wafer substrate business for power and RF power. The purchase price for this planned all-cash transaction is $850m (approximately €740m).

Bumpy surfaces with graphene between would help dissipate heat in next-gen microelectronic devices, according to Rice University scientists.Their theoretical studies show that enhancing the interface between gallium nitride semiconductors and diamond heat sinks would allow phonons – quasiparticles of sound that also carry heat – to disperse more efficiently. Heat sinks are used to carry heat away from electronic devices.