Search results for "SiC MOSFET"

Navitas Semiconductor, the pure-play, next-gen power semiconductor company, has announced that Dr. Ranbir Singh, EVP of the company’s GeneSiC business unit, has been inducted into the North Carolina State University’s Department of Electrical and Computer Engineering (ECE) Alumni Hall of Fame.

Vishay Intertechnology have announced two new 30V symmetric dual n-channel power MOSFETs that combine high and low side TrenchFET Gen V MOSFETs in a single 3.3mm by 3.3mm PowerPAIR 3x3FS package. For power conversion in computing and telecom applications, the Vishay Siliconix SiZF5300DT and SiZF5302DT claim to increase efficiency while reducing component counts and simplifying designs.

The new DC UPS UPSI-2412DP2 from Bicker Elektronik reliably protects safety-relevant 24VDC applications against system failure and data loss.

Discrete MOSFETs combine superior RDS(on) x QGD figure of merit with proven Toshiba innovations for reliability and stability.

Electronic Specifier recently had the opportunity to speak with Thomas Staudinger, President of EBV Elektronik, and Susanne Horn, Vice President Distribution Management EMEA & global e-tailerat Infineon.

California-based Bloom Energy has chosen CoolSiC MOSFETs and CoolSiC diodes from Infineon Technologies AG to process electrical power in Bloom’s Energy Server (the company’s fuel cell offering) and the Bloom Electrolyzer.

The dimension of digitalisation is enormous and global data volumes will only multiply exponentially in the future with video streaming, virtual conferences, cloud services, cryptocurrencies and many other digital applications.

Efficient Power Conversion (EPC) introduces EPC21701, an 80V laser driver IC capable of 15A pulsed current for ToF lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing

UnitedSiC, now Qorvo, has announced seven 750V silicon carbide (SiC) FETs in the surface mount D2PAK-7L package.

There was a palpable “Good to see you again!” vibe in the halls of Nuremberg Messe as PCIM Europe took place. GaN and SiC technology dominated but other developments for automotive and industrial applications were also talking points, writes Caroline Hayes