Search results for "gallium nitride"

In high-performance applications, the shift from silicon (Si) to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is significant. However, testing and qualifying these wide-bandgap semiconductors pose new challenges.

Ernst & Young LLP (EY US) announced that Gene Sheridan, CEO and Co-Founder of Navitas Semiconductor was named an Entrepreneur Of The Year 2024 Greater Los Angeles Award finalist.

Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.

Kubos Semiconductors, a microLED material technology firm, has secured a funding round of $2 million to accelerate the advancement of its cubic GaN technology, aimed at enhancing the efficiency of red microLEDs.

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs.

Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on High Voltage.

In 2024, the Newport Wafer Fab was at the epicentre of political, economic, and industry discussion as it went through a shift in ownership.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency.

Chicony Power Technology, a worldwide manufacturer of power supplies and a pioneer in power electronics, has announced the winners of its Annual Partner Awards, honouring Infineon Technologies AG as its 2023 “GaN Strategic Partner of the Year”.