Search results for "diodes"
Vishay IGBT power modules in redesigned INT-A-PAK package
New Yorker Electronics has introduced five new Vishay half-bridge IGBT power modules in the newly redesigned INT-A-PAK package.
Top 5 passives products in February
Electronic Specifier takes a look at the top 5 passives products to have been released in February 2024.
IGBT power modules cut conducting, switching losses
Vishay Intertechnology has introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package.
ROHM's new SBDs
ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.
NPL and Samsung Institute offer insights into blue OLED performance
Researchers at the National Physical Laboratory (NPL) have joined forces with the Samsung Advanced Institute of Technology (SAIT) to conduct a study aimed at understanding the degradation processes of blue organic light-emitting diodes (OLEDs), with their findings published in Nature Communications.
Infineon and VMAX intensify EV collaboration
VMAX has selected the new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching IGBT and CoolSiC Schottky Diode from Infineon for its next-generation 6.6 kW OBC/DCDC on-board chargers.
TVS from Diodes Incorporated provides ESD and surge protection for high-speed I/Os
Diodes Incorporated has announced its new bidirectional transient voltage suppressor (TVS) diode, addressing market demands for robust protection for high-speed data ports.
Würth Elektronik debunks aluminium electrolytic capacitors myth
Würth Elektronik’s Application Note ANP125 publishes the results of a study “The acoustic effects of harmonic distortion of aluminium electrolytic capacitors” on harmonic distortion of electrolytic capacitors. The result: Capacitors don’t cause any appreciable signal distortion.
Design and fabrication of optical waveguides
LASER COMPONENTS is set to showcase a series of technological innovations at the SPIE LASE conference during Photonics West.
SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rdgeneration technology.