Search results for "SiC MOSFET"

Electronic Specifier takes a look at the top 5 power products to have been released in June 2024.

Semiconductor manufacturer Nexperia has announced a USD 200 million (approximately 184 million Euros) investment to develop the next generation of wide bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), and to enhance production infrastructure at its Hamburg site.

SemiQ has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V SiC power MOSFETs in half-bridge packages.

Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.

At PCIM 2024 on the Navitas booth, the company was excited to show off its new portfolio of next-generation SiC and GaN solutions for fast charging, motor drives, power conversion and storage, and beyond. To learn more, Electronic Specifier’s Harry Fowle spoke with Llew Vaughan-Edmunds, Senior Director of Product Management (SiC, GaN) at Navitas, who shared his insights in the latest GaN innovations.

At PCIM 2024 on the Infineon booth, Electronic Specifier’s Harry Fowle got to speak with Peter Friedrichs, VP of SiC at Infineon, to learn about Infineon’s focus within the SiC market.

ROHM has developed four models as part of the TRCDRIVE pack series with 2-in-1 SiC moulded modules (two 750V-rated: BSTxxxD08P4A1x4, and two 1,200V-rated: BSTxxxD12P4A1x1) optimised for electric vehicle (xEV) traction inverters.

Nexperia has announced its first SiC MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ.

WeEn Semiconductors will be exhibiting the company’s latest highly efficient, high-power density silicon carbide (SiC) technologies, automotive grade power devices and highly reliable IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.

LEM has launched the HAH3DR S07/SP42, a new compact current sensor designed for 800V three-phase power modules.