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In industrial automation machinery, regenerative braking is a technique employing the existing structures and energy of electric motors (and their drives) along with dedicated subcomponents to slow, stop, and re-actuate axes. Rolf Horn of Digi-Key Electronics explains further.

ROHM has developed a high (eight volt) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices – optimised for power supply circuits in industrial and communication equipment.

Renesas Electronics has launched a new line of plastic-packaged radiation-hardened (rad-hard) devices for satellite power management systems. The four new devices include theISL71001SLHM/SEHMpoint of load (POL) buck regulator,ISL71610SLHMandISL71710SLHMdigital isolators, and theISL73033SLHM100V GaN FET and integrated low-side driver.

RFMW is now stocking a dual-band GaN MMIC amplifier from Qorvo, along with design support.

Transphorm and Silanna Semiconductor has announced GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5% with an uncased power density of 30W/in3.

Rampant development and roll out of 5G technology around the globe will offer new growth prospects to GaN and SiC power semiconductor manufacturers. These semiconductors are known for providing small form factor and high-power density, hastening their adoption whilst telecom operators augment infrastructure development.

EPCannounces the availability of theEPC9137, a 1.5kW, two-phase 48 to 12V bidirectional converter that operates with 97% efficiency in a very small footprint. The design of this demo board is scalable; that is, two converters can be paralleled to achieve 3kW or three converters can be paralleled to achieve 4.5kW. The board features fourEPC2206100V eGaN FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital...

Optimised for infotainment, advanced driver assistance systems, and safety-focused applications. Built on the Lattice Nexus platform, these new Certus-NX devices combine automotive-grade features with I/O density, power efficiency, small size, reliability, instant-on performance, and support for fast PCI Express and Gigabit Ethernet interfaces.

STMicroelectronics has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions,STi2GaN. STi2GaN is an innovative offering combining power and intelligence in compact, high-performance solutions required by the automotive industry as it shifts to electrified platforms.

Electronic Specifier takes a look at the top power products to have been released in June.