Search results for "gallium nitride"

For 60 years computers have become smaller, faster and cheaper. But engineers are approaching the limits of how small they can make silicon transistors and how quickly they can push electricity through devices to create digital ones and zeros.That limitation is why Stanford electrical engineering Professor Jelena Vuckovic is looking to quantum computing, which is based on light rather than electricity.

Richardson RFPD is sponsoring the Electronic Design Innovation Conference (EDI CON) 2017 GaN Panel workshop. EDI CON 2017 will be held at the Shanghai Convention & Exhibition Center of International Sourcing in Shanghai, China (April 25-27). Richardson RFPD's GaN Panel is scheduled for Wednesday, April 26, 14:50 to 15:30 (local time).

At the Applied Power Electronics Conference (APEC),Texas Instruments (TI) will unveil several system reference designsthat include the company’s most advanced analogue and embedded processing technologies. Supporting a range of system requirements from high voltage to low power, TI Designs reference designs give engineers the 'Power to Innovate' with breakthrough technology for industrial systems.

At the upcoming 2017 Applied Power Electronics Conference and Exposition (APEC 2017), in Tampa, Florida, visitors will see gallium nitride (GaN) transistors in action.

Gallium nitride (GaN) chips showcased their power (and how they boost power density and energy efficiency) at the Applied Power Electronics Conference (APEC) which was held on 26th to 30th March 2017 in Tampa, Florida.

In recent years, modern coatings technology has been advancing rapidly; used to prevent oxidation, corrosion and improve wear resistance as well as provide protection from high temperatures, manufacturers are keen to exploit new coatings to improve the durability of their products. However, not all coatings are the same and the quality of the final product relies on high quality equipment and expert application techniques.

X-FAB Silicon FoundriesandExagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany.

The HMC8400 low noise amplifiers from Analog Devices are now being shipped by Mouser Electronics. Members of Analog Devices’ extensive series of single-ended, fixed-gain radio frequency (RF) ICs, the HMC8400 devices are wideband distributed low noise amplifiers (LNAs) that operate between 2GHz and 30GHz.

Shanghai Huali Microelectronics Corporation (HLMC) and Cypress Semiconductor have announced a new milestone for the combination of HLMC’s 55nm Low Power (LP) process technology and Cypress' SONOS (Silicon Oxide Nitride Oxide Silicon) embedded Flash memory Intellectual Property (IP). HLMC’s customers have started early production of low-power embedded Flash aimed at Bluetooth Low Energy and Internet of Things applications using the tec...

The power supply used to be an afterthought in electronic systems design. No longer. Today’s systems are complex; they cram more functions into ever-smaller volumes, are increasingly portable and sometimes deployed remotely.