Search results for "gan"
Silicon germanium rectifiers from Nexperia
Silicon Germanium (SiGe) rectifiers from Nexperia offer engineers cutting-edge efficiency, thermal stability and space savings in new product designs. The SiGe rectifiers, which are now being shipped by Farnell, are available with 120V, 150V, and 200V reverse voltages that combine the high efficiency of their Schottky diode counterparts with the thermal stability of fast recovery diodes.
6.6-kW three-phase, three-level ANPC inverter/PFC bidirectional power stage reference design
This reference design provides a design template for implementing a three-level, three-phase, silicon carbide/gallium nitride (SiC/GaN) based ANPC inverter power stage. The use of fast-switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC...
Why GaN is critical to powering 5G infrastructure
GaN brings efficiency advantages compared with silicon, say Giuseppe Bernacchia, senior principal application engineer and Moshe Domb, director application engineering at Infineon Technologies
Rad-hard GaN transistor meets spaceborne performance
EPC Space has introduced the EPC7014UB GaN transistor for space mission equipment and claims that it has superior efficiency and performance compared to silicon devices.
Farnell expands Power Integrations portfolio with InnoSwitch3
Farnellhas strengthened its portfolio of Power Integrations products to include the InnoSwitch3 IC family, featuring PowiGaN technology.
InnoSwitch3 introduction fuels Digi-Key power campaign
As part of its Power Focus campaign,Digi-Key Electronics is offering Power Integrations' InnoSwitch3 IC family with PowiGaN technology.
High-power PIN diode switches utilising GaN technology
Fairview Microwave has just debuted a new series of high-power broadband RF and microwave PIN diode coaxial packaged switches that are suited for aerospace and defense, microwave radio, military and commercial communications, VSAT, SATCOM, test and measurement, wireless infrastructure and fiber optics applications.
Input protected low noise amplifiers with GaN technology
Fairview Microwave has unveiled a new series of Low Noise Amplifiers (LNAs) that are suited for use in electronic warfare, radar, space systems, R&D, prototype/proof of concept, ECM, microwave radio, VSAT, SATCOM, and test & measurement applications.
Nexperia reveals ‘Power Live’ conference highlights
‘Power Live’ is Nexperia’s second annual virtual conference. It runs from from September 21-23.
Edge AI Summit returns for fourth year (15th to 18th November)
The opportunity of Edge AI is clear - it is bringing real-time, personalised, scalable, and secure AI to resource constrained devices, unlocking the next wave of intelligent devices.