Search results for "gallium nitride"

Researchers from TU Delft in The Netherlands, in collaboration with a team at the University of Cambridge, have found a way to create and clean tiny mechanical sensors in a scalable manner. They created these sensors by suspending a 2Dsheet of hexagonal boron nitride (h-BN), or 'white graphene' over small holes in a silicon substrate. This innovation could lead to extremely small gas and pressure sensors for future electronics.

A wideband gallium nitride (GaN) power amplifier that offers best-in-class performance within a compact design has been announced by Analog Devices.Covering the 300MHz to 6GHz spectrum, the highly integrated HMC8205 provides significant benefits for system designers of applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification test equipment that require pulse or continuous wave (CW) support.

Eco-friendly purification of water – UV light is already being used to kill water-borne germs but the light sources used for this purpose are still predominantly mercury vapor lamps. UV LEDs have so far proved unattractive for reasons of cost. The aim of the UNIQUE project funded by the Bavarian Ministry for Economic Affairs, Media, Energy and Technology is therefore to develop high-power UV LEDs for industrial use.

A wideband gallium nitride (GaN) power amplifier, the HMC8205, covers the 300MHz to 6GHz spectrum and offers best-in-class performance in a compact design, claims Analog Devices.

In a proof-of-concept study, North Carolina State University engineers have designed a flexible thermoelectric energy harvester that has the potential to rival the effectiveness of existing power wearable electronic devices using body heat as the only source of energy.Wearable devices used to monitor a variety of health and environmental measures are becoming increasingly popular.

Sensors Expo, taking place 28-29th June, will see Micronor debuting there, after the announcement that it has collaborated with Optocon AG to create the FOTEMP1-OEM-MNT; a low cost, small form factor, single channel signal conditioner that seamlessly integrates fibre optic temperature sensing into any industrial control system, medical instrumentation or other OEM design.

Toshiba has introduced a range of 10 AEC Q101-qualified photocouplers designed to address the demanding isolation, interface, switching and form factor requirements of automotive applications.Supplied in low-profile SO6 packages, the TLX9304, TLX9378 and TLX9376 are IC output photocouplers offering respective data rates of 1Mbps, 10Mbps and 20Mbps. Also in S06 packaging are the TLX9300 and TLX9185A transistor output and TLX9905 and TLX9906 photov...

A programme of European ‘Wide Bandgap Technology’ seminars which will help design engineers to take advantage of the latest SiC and GaN components has been announced by Future Electronics. SiC (silicon carbide) and GaN (gallium nitride) wide bandgap semiconductor materials are attracting great interest from power engineers because of their superior thermal, switching and power-handling characteristics compared to silicon.

At this week’s 2017 Symposia on VLSI Technology and Circuits taking place in Japan, imec, the research and innovation hub in nano-electronics and digital technology, reported record breaking values below 10-9Ω/cm2for PMOS source/drain contact resistivity. These results were obtained through shallow Gallium implantation on p-SiliconGermanium (p-SiGe) source/drain contacts with subsequent pulsed nanosecond laser anneal.

The higher switching frequencies, operating temperatures, and voltage handling capabilities of Wide BandGap (WBG) materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) makes them of fundamental importance to any effort to reduce energy consumption.