Search results for "gallium nitride"
GaN power stage cuts EMI, boosts power-stage efficiency
The LMG5200 gallium nitride (GaN) power stage from Texas Instruments (TI) is in stock at Mouser Electronics. The device delivers 25% lower power losses compared to silicon-based designs, enabling single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom, and motor control applications.
Tapping out the benefits for aerospace manufacturers
Due to a strong demand for reliable maching solutions in the aerospace industry, cutting tool and tooling system specialist Sandvik Coromant has launched new tapping and thread millung tools forISO S materials (titanium and nickel-based alloys).The products have been purpose designed to deliver process security on high value components, such as engine casings, thus providing reductions in scrap rates and machine downtime.
Biodegradable microsensors aid food monitoring
A new generation of microsensors could provide the vital link between food products and the Internet of Things. ETH researchers have developed an ultra-thin temperature sensor that is both biocompatible and biodegradable.Nowadays microsensors are already used in many different applications, such as the detection of poisonous gases. They are also integrated into miniaturised transmitter/receiver systems, such as the ubiquitous RFID chips.
Next-gen GaN HEMTs offer up to 70% efficiency
Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), Wolfspeed, has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and...
Microsemi awarded contract for adoption of Silicon Carbide technology
Provider of semiconductor solutions differentiated by power, security, reliability and performance, Microsemi has announced it has become a member of PowerAmerica - a manufacturing institute comprised of public and private representatives from the semiconductor industry, the US Department of Energy, national laboratories and academia - to accelerate the commercialisation and adoption of wide band gap semiconductors.
For when a linear bearing simply cannot fail
Designer of linear bearings, slides and linear motion systems,LM76, has developed what it claims to be the most corrosion resistant linear bearing available. In space, deep under the sea, or in the harshest environments when there can be no 'Plan B', Pegasus series 1 Linear Ball Bearings can be counted on to perform. In some applications linear bearings will not move for days, weeks, months or even years, however, when called on to perform they m...
250W device powers up 50V GaN HEMT family
Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, Wolfspeed, has extended its family of 50V GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated GaN device available.
UV light improves development of semiconductors
A discovery by two scientists at the Energy Department's National Renewable Energy Laboratory (NREL) could aid the development of next-generation semiconductor devices.The researchers, Kwangwook Park and Kirstin Alberi, experimented with integrating two dissimilar semiconductors into a heterostructure by using light to modify the interface between them.
Pro line of inserts and holders announced by Allied Machine
Manufacturer of holemaking and finishing tooling systems, Allied Machine & Engineering has announced its new GEN3SYS XT Pro line of high penetration drilling products. The product line features enhanced holders and inserts with three geometries, and two advanced coatings.
LED technology: now you see me, now you don’t
In an advance that could boost the efficiency of LED lighting by 50% and even pave the way for invisibility cloaking devices, a team of University of Michigan researchers has developed a new technique that peppers metallic nanoparticles into semiconductors.It's the first technique that can inexpensively grow metal nanoparticles both on and below the surface of semiconductors.