Search results for "SiC MOSFET"

SICK has unveiled a milestone advance in its three-dimensional LiDAR technology with the launch of the multiScan multi-layered LiDAR sensor.

In Nuremberg, at PCIM Europe 2023, EPC is showing its latest GaN-based inverter reference design based on its EPC2302 eGaN FETs. It is designed to demonstrate the suitability of GaN for high power motor applications in equipment, vehicles and drones.

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has launched the second series of its ICeGaN 650V gallium nitride HEMT family, delivering robustness, ease-of-use and maximised efficiency.

Today’s 3.3kW switched-mode power supplies (SMPS) can achieve power densities of 100W/inch³ by utilising the latest technologies, including superjunction (SJ silicon) and silicon carbide (SiC) power MOSFETs in the totem-pole PFC stage as well as gallium nitride (GaN) power switches for high-voltage DC-DC stage operation.

onsemi, a specialist in intelligent power and sensing technologies, has announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost.

The efficiency improvements that can be derived from use of wide bandgap semiconductor technologies, such as silicon carbide (SiC), will have a vital role to play in next generation power systems.

ROHM has signed a joint development agreement with Mazda Motor Corporation and Imasen Electric Industrial for inverters and SiC power modules to be used in the electric drive units of electric vehicles, including e-Axle.

Renesas Electronics Corporation announced a new automotive Intelligent Power Device (IPD) that they assert will safely and flexibly control power distribution within vehicles, addressing the requirements of next-generation E/E (electrical/electronic) architectures.

Skyworks Solutions is introducing an isolated gate driver reference design that operates with Wolfspeed’s silicon carbide (SiC) field effect transistor (FET) power modules.

Seven new MOSFET and diode power modules designed specifically for on-board charger applications have been unveiled by Vishay Intertechnology.