Search results for "gallium nitride"

Supplier of high-performance RF, microwave, millimetre-wave and lightwave semiconductor products,MACOM, and STMicroelectronics have announced an agreement to develop GaN (Gallium Nitride) on Silicon wafers to be manufactured by ST for MACOM's use across an array of RF applications. While expanding MACOM's source of supply, the agreement also grants to ST the right to manufacture and sell its own GaN on Silicon products in RF markets outside of mo...

The GSP65RxxHB-EVB insulated metal substrate (IMS)-based evaluation platform from GaN Systems is now being shipped by distributor Mouser Electronics. The IMS evaluation platform demonstrates an inexpensive way to improve heat transfer, increase power density, and reduce system cost of power systems in automotive, consumer, industrial, and server or data centre applications.

A total of five research institutes and companies have been working on 'UV Power' since February 2017. This is a collaborative project funded by the German Federal Ministry of Education and Research (BMBF).The partners have made it their goal to provide high-power UV LEDs to cover a wide variety of applications. These LEDs will eventually replace conventional UV light sources, which often contain toxic mercury, in areas such as production, disinf...

Developer and manufacturer of next-gen 3D LEDs for display applications based on its gallium-nitride-nanowires-on-silicon platform, Aledia, has announced the closing of its Series C financing round with Intel Capital as a new investor. In addition to Intel Capital, the majority of existing Aledia investors participated in the €30m round, including Braemar Energy Ventures, Demeter, the Ecotechnologies Fund of Bpifrance (the French national in...

To see what is driving the exotic behaviour in some atomically thin – or 2D – materials, and find out what happens when they are stacked like Lego bricks in different combinations with other ultrathin materials, scientists want to observe their properties at the smallest possible scales.Enter MAESTRO, a next-generation platform for X-ray experiments at the ALS at the Department of Energy’s Lawrence Berkeley National Laboratory (...

A transfer technique based on thin sacrificial layers of boron nitride could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The technique could facilitate the production of low-cost wearable, mobile and disposable sensing devices for a wide range of environmental applications.

Just imagine: An optical lens so powerful that it lets you view features the size of a small virus on the surface of a living cell in its natural environment.Construction of instruments with this capability is now possible because of a fundamental advance in the quality of an optical material used in hyperlensing, a method of creating lenses that can resolve objects much smaller than the wavelength of light.

Located at the University of Sheffield’s Rotherham facility, an additional company has been appointed a tier 1 partner by the Advanced Manufacturing Research Centre with Boeing.The new member is Geo Kingsbury, whose managing director Richard Kingsbury now sits on the research centre's board of directors.

At the International Electron Devices Meeting (IEDM), imec reported ultralow contact resistivity of 5x10-10Ωcm2 on Gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget. The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resi...

Supplier of advanced semiconductor solutions,Renesas Electronics, has announced that it has successfully confirmed large-scale memory operation in a split-gate metal-oxide nitride oxide silicon (SG-MONOS) process using fin-shaped 3D transistors for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14nm or finer.