Search results for "gallium nitride"
Researchers prove assumptions in solar cell production
Research led by the University of Luxembourg investigated the manufacturing process of solar cells. The researchers proved that assumptions on chemical processes that were common place among researchers and producers for the past 20 years are, in fact, inaccurate. The physicists published their findings in the renowned scientific journal Nature Communications.
Efficiency is key to cost-effective data storage
Protecting the systems that store data and ensuring constant, high power supply at low acquisition and operating costs is a significant challenge for design engineers, says Armin Derpmanns, general manager, solution marketing at Toshiba Electronics Europe
Radiation-hardened 100 and 200V GaN FET power drivers
Supplier of advanced semiconductor solutions, Renesas Electronics, has announced what it claims to be the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications.
NIST chip predicts the quantum sensors of the future
Researchers at the National Institute of Standards and Technology (NIST) have created a chip on which laser light interacts with a tiny cloud of atoms to serve as a miniature toolkit for measuring quantities such as length with quantum precision. The design could be mass-produced with existing technology.As described in Optica, NIST's prototype chip was used to generate infrared light at a wavelength of 780nm, to be used as a length reference for...
ON Semi joins CharIN in development of electric mobility standards
ON Semiconductorhas joined the global Charging Interface Initiative e.V. (CharIN) ecosystem with the goals of promoting standards for charging systems in Electric Vehicles (EV), creating requirements for the evolution of EV charging systems and developing a certification system for manufacturers to implement charging systems into their products.
GaN transistor shrinks by a factor of eight compared with MOSFETs
A 40V gallium nitride (GaN) power transistor from Efficient Power Conversion (EPC) is eight times smaller than equivalently-rated MOSFETS.
Metasurfaces replace adhesive tape in microscope
The latest advance in a new type of optics aimed at improving microscopy started with a game of tennis three years ago.Unwinding after a long day of research in their respective labs, Mooseok Jang (PhD '16) and Yu Horie (who will receive his PhD in June 2018)—at the time, both graduate students at Caltech—met up for a game of tennis at Caltech's Braun Athletic Center courts.
High gain, wide bandwidth characterise GaN HEMTs
A family of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) from Wolfspeed are in stock at Mouser Electronics. The CG2H40xx and CG2H30070 operate from a 28V rail, and offer a versatile, general-purpose broadband solution for a variety of radio frequency (RF) and microwave applications.
Acquisition leads to semiconductor product expansion
Technical distributor of equipment and materials to the microelectronic research and manufacturing sectors,Inseto, has acquired IDB Technologies, the supplier of semiconductor wafers and substrates. The two companies have worked closely together for several years and share many of the same customers, who now stand to benefit greatly from the combined resources and technical expertise.
Lightweight touchscreen pressure sensor arrays
Touchscreens on mobile handheld devices can detect if and where a user is touching the screen, but standard technology cannot determine how much pressure is being exerted. Now, researchers at the University of California San Diego and the University of Texas at Austin have demonstrated a new technology for ‘force sensing’ that can be added to any type of display, including flexible devices, and potential other uses go far beyond touch...