Search results for "gallium nitride"
Arrow Electronics showcasing power tech at PCIM
Arrow Electronics will showcase its latest innovations, developed in collaboration with suppliers and its technology ecosystem, at PCIM 2024 running from 11-13 June in Nuremberg, Germany.
PowerUP Asia 2024: challenges, trends, and latest innovations
Leading power semiconductor companies will be discussing the latest power semiconductor development trends and innovations, and how these are helping the drive toward greener electronics, at the upcoming PowerUP Asia 2024 virtual conference.
Implementing GaN in power electronics design: key factors
Here, you can find out the key factors to consider when implementing GaN in power electronics design processing, and the challenges of doing so.
Dynamic test methods tailored to specific applications
In high-performance applications, the shift from silicon (Si) to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is significant. However, testing and qualifying these wide-bandgap semiconductors pose new challenges.
Navitas Semiconductor’s Gene Sheridan finalist for Entrepreneur Of The Year
Ernst & Young LLP (EY US) announced that Gene Sheridan, CEO and Co-Founder of Navitas Semiconductor was named an Entrepreneur Of The Year 2024 Greater Los Angeles Award finalist.
Trends and challenges in the era of wide bandgap semiconductors for power electronics
Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.
Kubos receives investment for microLED efficiency
Kubos Semiconductors, a microLED material technology firm, has secured a funding round of $2 million to accelerate the advancement of its cubic GaN technology, aimed at enhancing the efficiency of red microLEDs.
LMG3100R017 by Texas Instruments
The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.
LMG2100R044 by Texas Instruments
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs.
Texas Instruments brings you the latest in High Voltage
Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on High Voltage.