Search results for "Wolfspeed"
Power electronics in the spotlight at Fortronic Power 2018
A concentration of technological innovations and solutions in the power electronics industry will be on show at Fortronic Power 2018, the 15th edition of the event, organised by Assodel (Electronic Districts Association - Italy), and taking place in the city of Modena.
High gain, wide bandwidth characterise GaN HEMTs
A family of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) from Wolfspeed are in stock at Mouser Electronics. The CG2H40xx and CG2H30070 operate from a 28V rail, and offer a versatile, general-purpose broadband solution for a variety of radio frequency (RF) and microwave applications.
RF GaN industry: a boost led by the implementation of 5G networks
In the last couple of years, the RF GaN market experienced an impressive growth and has reshaped the RF power industry landscape. Yole Développement (Yole) announced in their report titled'RF GaN Market: Applications, Players, Technology, and Substrates 2018-2023' that bythe end of 2017, the total RF GaN market was close to $380m.
GaN RF technology and GaN-on-SiC foundry services at CSICS 2017
Wolfspeed is amplifying RF amplifier technology, as well as showcasing the GaN-on-SiC commercial foundry services, at CSICS 2017, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
Next-gen GaN HEMTs offer up to 70% efficiency
Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), Wolfspeed, has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and...
250W device powers up 50V GaN HEMT family
Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, Wolfspeed, has extended its family of 50V GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated GaN device available.
SiC MOSFETs enables power supplies to achieve titanium efficiency
Wolfspeed, supplier of silicon carbide (SiC) power products — including SiC MOSFETs, Schottky diodes, and modules — has advanced the development of high efficiency data centre power supplies through the implementation of an innovative totem-pole PFC topology that employs its latest low-inductance SiC MOSFETs to exceed an 80+ Titanium rating, which is critical for reducing the overall power consumption for data centres, estimated to be...
SiC MOSFET comes in seven-lead TO-263-7 surface mount package
Availability and full design support capabilities for a new silicon carbide power MOSFET from Wolfspeed have been announced by Richardson RFPD. The 1200V, 75 mΩ C3M0075120J features Wolfspeed’s C3M SiC MOSFET technology and is available in a compact, seven-lead TO-263-7 surface mount package.
Taking a step towards the IGBT industry
IXYS acquisition by Littelfuse hasturned the IGBT landscape upside down. This has initiated a new process towards market consolidation, a trend identified byYole Développement’sanalysts in their latest report,IGBT Market & Technology Trends 2017.
GaN MMICs designed for S-band radar applications
Wide bandgap semiconductor technology company, Wolfspeed, has introduced two new GaN MMICs, the first 50V GaN devices specifically designed for S-band radar (2.7-3.5GHz) applications. These new 50V GaN MMICs enable radar systems designers to reduce time to market with a less costly, less complex, 50V power amplifier line-up, while delivering what it claims to be the most efficiency possible.