Search results for "SiC MOSFET"

Navitas Semiconductor has announced the launch of its third-generation automotive-qualified SiC MOSFETs, available in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.

Nine new EliteSiC Power Integrated Modules (PIMs) have been introduced by onsemi. They enable bidirectional charging capabilities for ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS).

With wide bandgap semiconductors like Gallium Nitride (GaN) and Silicon Carbide (SiC) growing in popularity, it begs the question: GaN or SiC?

Infineon Technologies introduces the new CoolSiC MOSFETs 2,000V in the TO-247PLUS-4-HCC package to meet designers' demand for increased power density without compromising the system's reliability even under demanding high voltage and switching frequency conditions.

Skyworks' Si82Fx family is a comprehensive line of isolated gate driver solutions designed to tackle power switch driving needs, whether working with Silicon MOSFETs, IGBTs, or cutting-edge SiC and GaN devices.

Navitas Semiconductor has released its 4.5 kW AI data centre power supply reference design, with optimised GaNSafe and Gen-3 ‘Fast’ (G3F) SiC power components.

onsemi has introduced its latest generation SiC technology platform, EliteSiC M3e MOSFETs. The company also disclosed plans to release multiple additional generations through 2030.

Infineon Technologies has unveiled its 750V G1 series of discrete CoolSiC MOSFETs, designed to cater to the growing requirements for enhanced efficiency and power density in both industrial and automotive power systems.

Electronic Specifier takes a look at the top 5 sensor products to have been released in December 2023.

Designed for high-power industrial applications like 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bi-directional DC-DC converters forUPS. TheSiCtechnology allows for higher voltages, faster switching, and lower on-resistance. The design offers enhanced reliability in addition to low input capacitance, common gate-input charge, and a drain-to-source on-resistance as low as 15mΩ.