Search results for "SiC MOSFET"
5.7kVrms, ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiC FETs
The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732 has up to ±10A peak source and sink current.
ROHM SiC and EcoGaN at PCIM Europe 2024
During this year’s PCIM Europe in Nuremberg, Germany, June 11th – 13th, ROHM will present its new power semiconductor solutions with a special focus on wide bandgap devices.
UCC5350 by Texas Instruments
The UCC53x0 is a family of single-channel, isolated gate drivers designed to drive MOSFETs, IGBTs, SiC MOSFETs, and GaN FETs (UCC5350SBD).
GaN on Sapphire devices suit digital power supplies
Taiwanese manufacturer Bruckewell is now also offering various GaN solutions for digital power supplies with QR (quasi resonant) and LLC topologies.
SiC FET lowers conduction losses
Wide Band Gap Devices like Silicon Carbide (SiC) Field Effect Transistors (FETs) are more and more considered for High-Voltage and High Power applications because of the capability of higher switching frequencies and thus better efficiency than common Silicon FETs.
UCC5880-Q1 Isolated 20-A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications
The UCC5880-Q1 device is an isolated, highly configurable adjustable slew-rate gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications.
New 62mm package in Infineon’s CoolSiC portfolio
Infineon announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package.
Scaling up SiC crystal growth to meet demand
Due to the complexity of growing quality silicon carbide (SiC) crystals, manufacturers need help obtaining sufficient systems to meet global production targets
Navitas celebrates its ten-year milestone
Navitas marks 10 years of innovation and growth in a broad range of fast-growing markets from ultra-fast mobile charging to AI data centres, renewable energy and EVs.
New 2,200V silicon carbide MOSFETs
Toshiba Electronics has developed a new 2,200V rated silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD) for use in 1,500V DC applications such as photovoltaic (PV) inverters, electric vehicle (EV) chargers, high frequency DC/DC converters, and energy storage systems.