Search results for "gallium nitride"

Nearly five years ago, NASA and Lincoln Laboratory made history when the Lunar Laser Communication Demonstration (LLCD) used a pulsed laser beam to transmit data from a satellite orbiting the moon to Earth — more than 239,000 miles — at a record-breaking download speed of 622MB/s.Now, researchers at Lincoln Laboratory are aiming to once again break new ground by applying the laser beam technology used in LLCD to underwater communicati...

High volume testing of semiconductor devices up to 100GHz and beyond will be announced by Presto Engineering at European Microwave Week, in Madrid (23rd-28th September). Applications that use GHz frequencies, i.e. millimetre wavelengths (MMW), are increasing rapidly and thus driving the need for high volume device testing.

Electronica 2018: By using high voltage GaN FETs from Transphorm, Delta Electronics has been able to reduce the size of its 80Plus Platinum 800W power supply by 25%.

Smart energy is the umbrella term for a wide range of technologies in this area relating to energy storage, consumption control, and energy conversion. electronica 2018, 13th to 16th November, in Munich, has the motto ‘Connecting everything: Smart, safe & secure’ and will be showcasing products and services from a wide range of sectors.

STMicroelectronicsand Leti have announced their cooperation to industrialise GaN (Gallium Nitride)-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high efficiency, high power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers.

A ‘cascode’ sounds like an archaic term from the era of vacuum tubes and that’s where it comes from. Cascodes today, though, are very relevant in their latest incarnation as combinations of SiC JFETs and Si MOSFETs, giving performance that’s getting very close to the suitable switch. Guest blog byZhongda Li, NPI Manager at UnitedSiC.

A crystal structure that both increases current and voltage in Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band, has been announced by Fujitsu Limited and Fujitsu Laboratories.

Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now. By: Anup Bhalla, VP Engineering, UnitedSic.

Arrow Electronics has signed up to supply GaN Systems’ range of GaN (gallium nitride) transistors in Europe, Middle East and Africa (EMEA). GaN Systems’GaN power semiconductors offer high efficiency, small assizes and open up opportunities in applications from electric vehicles and renewable energy to industrial motor drives and consumer electronics.

It has been announced that OMC has launched a new high brightness purple surface mount LED lamp featuring the company’s proprietary Active Diffuser Technology, which produces a far richer and more efficient output than traditional single wavelength devices.