Search results for "gallium nitride"

The SiC FET in a ‘cascode configuration comes closer to the ideal power switch, believes Dr Anup Bhalla, VP engineering at UnitedSiC

Graphene industry is entering a new phase, a phase of growth. The industry has accumulated significant experience over the past ten to twelve years to bring about this phase. In this article, IDTechEx Research offer opinions about the recent past and future outlook of the graphene industry based on the report ‘Graphene, 2D Materials and Carbon Nanotubes: Markets, Technologies and Opportunities 2019-2029’.

It has been announced that visitors to Analog Devices’ (ADI) stand (Stand 442, in Hall 6) at the PCIM 2019 exhibition and conference, will see a series of demonstrations showing ADI technologies in battery management and power conversion designs for efficient energy storage and EV chargers.

Fans are a vital element of many electronic systems, designed to keep the device operating within recommended temperatures, while making sure the electronics are working at their optimum level.Attempts have been made to find alternative thermal management methods, with none proving as effective and economical as the fan. By Ryan Smoot, CUI Devices

Richardson RFPD has launched GaN & SiC for Power Electronics Tech Hub, a microsite featuring the latest news on gallium nitride (GaN) and silicon carbide (SiC) innovations, news and product releases. The microsite offers a robust library of GaN and SiC new product features and technical resources, including white papers and videos, as well as links to online purchasing and the option to sign-up for product updates via email.

An eBook that offers an in-depth look at 5G connectivity and its implications for mobile broadband and a variety of new technologies and applications has been published by distributor Mouser Electronics in collaboration with Qorvo.

High-power domed light emitting diodes (LEDs), optimised for directional applications including high-bay and low-bay interior lighting for retail, horticulture and indoor sports, architectural illumination, and stadium, street and area lighting are in stock at RS Components.

Continuing its progress in accelerating the adoption of gallium-nitride (GaN)-on-silicon semiconductors in power markets, leading GaN innovator Exagan has opened a new Power Solutions Center in Toulouse, France, to extend its applications support and market reach in wide-ranging, customer-specific end products.

Infineon Technologies extents its large portfolio of high voltage devices with a new package: XHP 3. This is a new flexible IGBT module platform for high power applications in the voltage range from 3,3kV up to 6,5kV. The module allows for scalable designs with reliability and highest power density. Due to its symmetrical design with low stray inductance it offers significantly improved switching behaviour.

Thermal jumper chips that enable circuit designers to manage temperature rise in compact power electronic assemblies have been released by TT Electronics. The TJC series provide a thermally conductive pathway with electrical isolation for management of PCB hotspot areas.