Search results for "gallium nitride"
GaN technology is transforming medicine
GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine
PCIM Asia 2019 to open on 26th June
PCIM Asia 2019 will open its doors on 26th June in Shanghai to showcase the latest offerings in the power electronics industry. In conjunction with an extensive concurrent event programme, the fair will bring invaluable market intelligence and business opportunities to industry players from various sectors such as e-mobility, smart grid, rail, renewable energy and others.
Power amplifier module operates in 225MHz to 2600MHz range
The MAMG-100227-010C0L broadband power amplifier module from MACOM is now being shipped by distributor Mouser Electronics. The module offers design flexibility for a broad selection of radio and communications applications, including military tactical communications and electronic countermeasures, wireless public safety communications, and land mobile radio systems.
GaN process for high power mmWave applications
Pure-play compound semiconductor foundry, WIN Semiconductors, has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15?m-gate technology, NP15-00, that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure.
Advanced analogue peripherals allow more sensors and user features
As the latest smart electronic products add extra sensor driven features and adopt higher efficiency power technologies such as silicon carbide or gallium nitride to save energy, STMicroelectronics has unleashed its next generation of microcontrollers with the performance to manage them.
Three-phase GaN inverter reference design for integrated drives
This reference design is a three-phase inverter with a continuous power rating of 1.25kW at 50°C ambient and 550W at 85°C ambient for driving 200V AC servo motors. It features 600V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an 1.95mm Insulated Metal Substrate (IMS) board for efficient heat dissipation.
Three-phase GaN inverter reference design for integrated drives
This reference design from Texas Instruments is a three-phase inverter with a continuous power rating of 1.25kW at 50°C ambient and 550W at 85°C ambient for driving 200V AC servo motors. It features 600V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on a 1.95mm Insulated Metal Substrate (IMS) board for efficient heat dissipation.
Power device analyser boasts double-pulse test capability
A dynamic power device analyser with double-pulse tester (PD1500A) from Keysight Technologies delivers reliable, repeatable measurements of wide-bandgap (WBG) semiconductors, while ensuring the safety of the measurement hardware and the professionals performing the tests.
SiC module enables 175°C continuous junction operation
A silicon carbide module from Wolfspeed is available at Richardson RFPD with full design support capabilities. Wolfspeed developed the XM3 power module platform to maximise the benefits of SiC, while keeping the module and system design robust, simple and cost-effective.
Graphene linear array sensor to launch at Laser World of Photonics
Graphene Flagshippartner, Emberion, is launching a new VIS-SWIR graphene photodetector at Laser World of Photonics on 24th to 27th June in Munich, Germany. Showcased in Hall A2 at stand 113/3, the linear array can enable on-site analysis of food and agriculture products using infrared detection - at a lower cost than existing indium gallium arsenide (InGaAs) infrared sensors.