Search results for "gallium nitride"

For the past several decades, the subject of ‘power’ has been consistently viewed as a challenge focused primarily on the incremental improvement - be that by technology, by government regulations, or by shifting consumer behaviour. Much attention has been paid to how the energy we use is generated, and rightly so. Energy production is one of the world’s largest sources of carbon emissions.

High energy density switch-mode power supplies (SMPSs) can accelerate battery charging, reduce the size of solar micro-inverters, and meet the demand of server farm power requirements, all without generating excessive heat. However, engineers are now reaching the performance limits of the silicon MOSFETs and IGBTs that form the primary switching elements of conventional SMPSs. Instead, transistors constructed from enhancement-mode gallium nitride...

In this video Brandon Becker, Product Manager of Industrial Wide Band Gap at ON Semiconductor will give you an overview of wide bandgap capabilities focusing on self and carbide SiC for short silicon power devices.

The LMG1210 200V half-bridge MOSFET and GaN FET driver from Texas Instruments (TI) is in stock at Mouser Electronics. Part of TI’s gallium nitride (GaN) power portfolio family, the LMG1210 enables higher efficiency, increased power density, and lower overall system size over traditional silicon-based alternatives, and it is optimised specifically for speed-critical power-conversion applications.

Power Integrations has announced the delivery of its one-millionth InnoSwitch3 switcher IC featuring the company’s PowiGaN gallium-nitride technology. In an event at the Shenzhen headquarters of Anker Innovations, Power Integrations CEO Balu Balakrishnan presented the one-millionth GaN-based IC to Anker CEO Steven Yang.

The GaN and SiC Power Semiconductor Market is set to grow from its current market value of more than $400m to over $3bn by 2025; as reported in the latest study by Global Market Insights. The power semiconductor devices are witnessing high adoption for different power applications fuelling the growth of the GaN and SiC power semiconductor market.

The evolution of diode laser price and performance is rapidly opening new markets. In this article, the technology consulting firm IDTechEx Research demonstrate how advances in semiconductor laser technology enable novel applications in laser material processing and industrial manufacturing.

Combining high-speed performance with fully customisable features, the FLIR A6260 offers improved sensitivity and linearity across the full dynamic range, making it ideal for radiometry and temperature calibrated applications. The FLIR A6260 records full-frame data at 180 fps and can be synchronised with other instruments enabling precision stop-action recording of high-speed events.

Power Integrations has announced new members of its InnoSwitch3 families of offline CV/CC flyback gallium nitride-based AC/DC converter ICs. The new ICs feature up to 95% efficiency across the full load range and up to 100W in enclosed adapter implementations without requiring a heatsink. This increase in performance is achieved using an internally developed high-voltage GaN switch technology.

The QPA2308 MMIC power amplifier from Qorvo is in stock at Mouser Electronics. Engineered for commercial and military applications, the device provides high-power density and power-added efficiency for 5 to 6GHz radio frequency (RF)-based designs.