Search results for "SiC MOSFET"
APEC 2024 announces call for industry session proposals
APEC 2024, to be held in Long Beach, California, from 25―29 February 2024, announces the call for submission of Industry Session Proposals for the conference’s increasingly popular presentation series.
Reliable SiC Solutions by onsemi and EBV
EBV Elektronik and onsemi are committed to helping you find the best solution for your application: with the onsemi end-to-end EliteSiC supply chain and the total control over quality and reliability at every manufacturing stage.
Nidec and Renesas collaborate on semiconductor solutions for next-generation E-Axle for EVs
Nidec and Renesas Electronics have agreed to join forces on the development of semiconductor solutions for a next-generation E-Axle (X-in-1 system) that integrates an EV drive motor and power electronics for electric vehicles (EVs).
RF front-end module operates in 24.25–30.5 GHz frequency range
Availability and full design support capabilities for a new RF front-end module from United Monolithic Semiconductors is announced by Richardson RFPD.
Space: the ultimate holiday destination?
Is it possible that one day, you or I could step onto another planetary body? For decades, space travel has been reserved for the select few.
Reliable SiC Solutions by onsemi and EBV
EBV Elektronik and onsemi are committed to helping you find the best solution for your application: with the onsemi end-to-end EliteSiC supply chain and the total control over quality and reliability at every manufacturing stage. Download resource kit
Cambridge GaN Devices release new Application Interface Boards
Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB.
Infineon's OptiMOS power MOSFETs new at Rutronik
Infineon’s OptiMOS power MOSFETs with 25V to 150V are now available at Rutronik as an improved version in the source-down package with bottom-side cooling and centre-gate footprint.
Schottky diodes boost efficiency in switch power designs
Vishay’s Gen 3 650 V silicon carbide Schottky diodes feature a merged PIN Schottky (MPS) design.
QPT aiming to revolutionise GaN Power Electronics
QPT Limited, the clean-tech company focussing on improving electrical efficiency, is the first company to create the technologies needed to enable GaN to operate at well over the current limitations of 100kHz right up to 20MHz in high power, high voltage applications that use hard switching such as motor drive systems for HVAC, robotics, etc.