Search results for "SiC MOSFET"

Vishay has expanded its Gen 7 platform of 120 V FRED Pt Hyperfast rectifiers with four new Automotive Grade devices in the eSMP series SMF (DO-219AB) package.

Navitas Semiconductor has announced the world’s first 8.5kW power supply unit (PSU), powered byGaN and SiC technologiesto achieve 98% efficiency, for next-generation AI and hyperscale data centres.

Nexperia has announced that it has entered into a strategic partnership with KOSTAL that will enable it to produce wide bandgap (WBG) devices that more closely match the exacting requirements of automotive applications.

RECOM has launched a range of tiny DC/DCs for high-performance gate drive applications.

After announcing theworld’s first 300-millimeter gallium nitride (GaN) power waferand opening theworld’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia,Infineon Technologieshas unveiled the next milestone in semiconductor manufacturing technology.

Navitas has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th- 15th).

ROHMhas developed external FET-type controller ICs utilising PWM current control mode optimised for AC/DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors: theBD28C55FJ-LBfor low-voltage MOSFETs,BD28C54FJ-LBfor medium- to high-voltage MOSFETs,BD28C57LFJ-LBfor IGBTs, andBD28C57HFJ-LBfor SiC MOSFETs.

As data centres continue to accommodate the growing AI industry, curbing AI power consumption in data centres has become a critical problem.

ROHM Semiconductor Europe is looking forward toelectronica 2024– the trade fair and conference for electronic components, systems, applications, and solutions. The event will take place between 12-15thNovember in Munich.

With SiC and GaN continuing their meteoric rise, how might these technologies impact the EV market going forward.