Search results for "SiC MOSFET"

Originally developed at Xerox PARC in the 1970s, Ethernet has come a long way since its ratification as the IEEE 802.3 standard in 1983. It has evolved to support increasingly faster networks, more nodes, and longer distances while retaining backward compatibility with previous versions.

With increasing competition between electric vehicle (EV) manufacturers to develop models with lower cost and longer drive range, power system engineers are under pressure to reduce power losses and improve traction inverter system efficiency, which can improve driving ranges and provide a competitive advantage.

EBV Elektronik and onsemi are committed to helping you find the best solution for your application: with the onsemi end-to-end EliteSiC supply chain and the total control over quality and reliability at every manufacturing stage.

With increasing competition between electric vehicle (EV) manufacturers to develop models with lower cost and longer drive range, power system engineers are under pressure to reduce power losses and improve traction inverter system efficiency, which can improve driving ranges and provide a competitive advantage.

Magnachip Semiconductor has begun mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for automotive energy recovery systems.

TIDM-2014 is a 800-V, 300 kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed which provides a foundation for design engineers to create highperformance, high-efficiency traction inverter systems and get to market faster.

Traction inverters are the main consumer of battery power in electric vehicles (EVs), with power levels reaching 150 kW or higher. The efficiency and performance of traction inverters directly impact an EV’s driving range on a single charge. Therefore, to build the next generation of these systems, the industry has widely adopted silicon carbide (SiC) field-effect transistors (FETs) to enable higher reliability, efficiency and power density...

Power Integrations released the world's highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN switch.

STMicroelectronics has announced a high-current motor-drive series with the introduction of the first two STSPIN9 devices, targeting high-end industrial and home and professional appliances.

Integrated drivers are available from Toshiba that enable a reliable, high-performance gate driver covering all of the available switch technologies at any power level. Driving the gates of IGBTs, Si MOSFETs and SiC MOSFETs correctly in high frequency switching applications, i.e., EV charging, is vital for high efficiency and reliability. Toshiba’s integrated smart gate drivers make this easy, download the whitepaper and discover how.