Search results for "SiC MOSFET"

ROHM has recently announced the development of second-generation SiC Schottky barrier diodes ideal for power supply circuits in PV power conditioners, industrial equipment, servers, air conditioners, and more.

In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree announces a new family of 50A Silicon Carbide (SiC) devices, including the industry's first 1700V Z-FETT SiC MOSFET.

Cree, Inc. has expanded its design-in support for the industry's first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree's SiC Z-FETT MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

Cree announces a new family of seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes optimized for price and performance and available in a range of amperages and packages. Cree is advancing the adoption of silicon carbide power devices into mainstream power applications by introducing a comprehensive family of SiC diodes with a wide range of amperage ratings and package options.

ZMD AG today announced two high-performance devices to complement its family of LED driver integrated circuits. The ZLED7020 and the ZLED7030 LED driver ICs operate at up to 98% efficiency, thus helping to achieve the highest possible lumen-per-watt output in high brightness LED applications.

Torex Semiconductor is proud to introduce its latest DC/DC Converter for powering AMOLED display drivers and e-reader display panels. The XC9519 is a dual-output DC/DC converter which can generate both a positive and a negative voltage. The step-up converter circuit compares a built-in reference voltage of 1.0V to the FBP voltage (accuracy ±1.5%) and a positive output voltage can be set freely with the external components up to 18V.

Many approaches to power management sacrifice speed, cost or overall reliability. They impede the design process by requiring the consideration of hundreds of parts from different vendors, require the writing of microprocessor code and, if any hardware and timing changes need to be implemented, the board will require a respin.

Six partners from the semiconductor and solar industries are joining forces in the NEULAND project funded by the Federal Ministry of Education and Research (BMBF) to explore new avenues for the efficient use of electricity from renewable sources. NEULAND stands for innovative power devices with high energy efficiency and cost effectiveness based on wide bandgap compound semiconductors. The project aims to reduce the losses in feeding electricit...

Infineon Technologies today announced the availability of its 2nd generation SiC (Silicon Carbide) Schottky diodes in the TO-220 FullPAK package. The new TO220 FullPak portfolio combines the high electrical performance standards of the 2nd generation ThinQ! SiC Schottky diodes with the advantages of a fully isolated package, including easier and more reliable mounting without having to use isolating bushing and foil.

With its latest generation of high-voltage CoolMOS MOSFETs Infineon is rolling out another innovation setting new standards in the field of energy efficiency. At the PCIM Europe 2011 (May 17-19) in Nuremberg, Germany, Infineon presents the new 650V CoolMOS™ CFD2 – the world`s first high-voltage transistor with both a drain-source voltage of 650V and an integrated fast body diode. The new CFD2 devices succeed the 600V CFD products, enabling no...