Search results for "SiC MOSFET"
Vishay Asymmetric MOSFET Saves Space/Increases Power Density (Product Demo)
The Vishay SiZ700DT is the industrys first dual TrenchFET asymmetric power MOSFET in the new PowerPAIR package, which measures 6 mm by 3.7 mm. Integrating both the high-side and low-side MOSFETs for buck converters, the PowerPAIR device allows dc-to-dc circuits to handle higher levels of current while replacing the traditional pair of SO-8 or PowerPAK 1212-8 packages, thus saving on PCB real estate.
Controller ICs for Intermediate Bus Converters
Vishay Intertechnology has announced two new controller ICs for intermediate bus converter (IBC) applications that are the first such single-chip devices on the market to integrate high-voltage (75-V) half-bridge MOSFET drivers with a 1.6-A peak current driving capability, as well as a full range of current monitoring and control features.
New Vishay Siliconix Power MOSFETs
Vishay Intertechnology has released a family of p-channel power MOSFETs in the PowerPAK SC-75, including several devices rated from 8V to 30V that are industry-firsts for their voltage ratings in this package type.
New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance Down to 64 mΩ
Vishay Intertechnology, Inc. today released a new series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on-resistance from 64 m ohms to 190 m ohms at 10 V and with a wide range of current ratings from 22 A to 47 A. Based on Vishay's next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversi...
National Semiconductor présente le premier driver de LED du marché, à réserve dynamique, pour applications haute puissance
National Semiconductor a annoncé aujourd'hui le premier driver de LED du marché à commande d'espace libre dynamique et sorties multiples pour applications haute puissance, capable de piloter précisément et efficacement jusqu'à quatre chaines de LED. Le LM3464, membre de la famille de circuits à rendement optimisé PowerWise® de National, optimise le rendement tout en réduisant la complexité et le coût du système, pour les applications...
National Semiconductor Introduces Industry’s First 2A, Single Inductor, RGB LED Driver for Portable Projectors
Compact LM3435 with I2C Control Interface Drives LEDs Sequentially
National Semiconductor Introduces New SolarMagic ICs for Microinverter, Power Optimizer and Charge Controller Systems
National Semiconductor Corp. today introduced ten new SolarMagic integrated circuits (ICs), the first in a series developed to reduce cost, improve reliability and simplify design of photovoltaic (PV) systems.
National Semiconductor Introduces Industry’s First 20V Synchronous Buck Controller to Integrate Key Four Features
National Semiconductor announced a new synchronous voltage-mode buck controller that drives a variety of high-current point-of-load applications in printers, telecom, networking and embedded computing applications.
National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs
National Semiconductor has introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver de...
National Semiconductor Introduces Industry’s First Full-bridge PWM Controllers with Integrated MOSFET Gate Drivers
National Semiconductor Corp. today introduced the industry’s first full-bridge pulse width modulation (PWM) controllers to integrate all four primary-side bridge MOSFET gate drivers. The LM5045 and LM5046 are well-suited for delivering higher efficiency and higher power density in quarter-brick and eighth-brick power modules used in a variety of high input voltage communications infrastructure applications.