Search results for "igbt"
Formula E racing team provided with ROHM SiC power modules
The VENTURI Formula E team in the FIA Formula E 2017-2018 (season four) was provided withfull SiC power modules from ROHM.This module will support further improvements in the car’s performance under racing conditions.ROHM became VENTURI’s official technology partner in season 3, and provides what the company claims to be the world’s most advanced SiC power devices used in the inverter, which is the core of the electric vehicle p...
Half-bridge reference design enables rapid prototyping
A universal half-bridge reference design has been announced by RECOM. It is a platform design that can be used to compare the real life performance of various high power IGBT, 1st/2nd generation SiC, GaN, MOSFET and Cascode switching technologies. As the gate driver and PCB layout is the same for every transistor type, users will be able to compare and contrast their real life switching performance and make informed choices about the right techno...
State of the SiC MOSFET
It is highly unlikely that anyone reading this article is unfamiliar with the Insulated Gate Bipolar Transistor (IGBT). This disruptive power transistor, first commercialised in the early 1980s, has had an enormous positive impact on the power electronics industry, enabling innovative converter design, improved system efficiencies, and worldwide energy savings. Indeed, some estimates suggest the IGBT has helped forestall 75 trillion pounds of CO2...
Fast recovery diode offers improved thermal stability
International power and IC semiconductor company, IXYS, has announced that its UK subsidiary introduced a new addition to its family of 4.5kV fast recovery diodes (HP-sonic FRD) with a high rate of change of current capability and soft recovery characteristics. The new diode has a nominal operating current of 460A and is optimised to be used in conjunction with IXYS UK’s range of press-pack IGBTs.
Gate drivers reduce system complexity and cost
A single-channel, isolated, IGBT and MOSFET gate driver in a wide-body eSOP package has been added toPower Integrations'SCALE-iDriver IC family, SID1102K.Featuring a peak drive current of up to 5A, the new part is able to drive 300A switches without boosters; external boosters can be used to cost-effectively scale gate current up to 60A peak.
Semiconductor insight, innovation and impact
In this video, Corey Deyalsingh, Director Power Semiconductor, Electronics at Littelfuse explains the concept of ‘The Total Product Ownership Experience’.
DC/DC converter features ultra-wide 4:1 input range
TRACO POWER has announced the release of its THM 30WI family of medical 30W DC/DC converters with ultra-wide 4:1 input range in the industry standard 1x2” footprint. The THM 30WI series are a reliable solution not only for medical equipment but also for demanding ITE applications such as transportation, control and measurement or IGBT drivers.
Power products unveiled at SPS IPC Drives 2017
At this year'sSPS IPC Drives trade fair in Nuremberg, Germany on the 28th to 30th November, Schaffnerwill be exhibitingand introducing product innovations from its EMC, power quality and power magnetics divisions.
DC/DC converters target SiC and IGBT applications
Availability and full design support capabilities for a new series of DC/DC converters from RECOM Power (RECOM) have been announced by distributor Richardson RFPD. The RxxPxxyyD Series devices feature 6400VDC isolation and <10pF isolation capacitance and have been designed to fulfill the demanding requirements of high slew-rate SiC transistor drivers.
Three-phase half-bridge gate driver simplifies motor drive design
Diodes claims to simplify BLDC and PMSM motor drive design with the DGD2136 three-phase gate driver IC.