Search results for "SiC MOSFET"
IR’s Family of 4 x 5 mm Integrated SupIRBuck™ Point-Of-Load Voltage Regulators with 33% Smaller Footprint Dramatically Shrinks PCB Size
International Rectifier has introduced a new family of SupIRBuck™ integrated point-of-load (POL) voltage regulators in a compact 4 x 5 mm package. The devices, tailored for energy-efficient server, storage, telecom, netcom and set-top box applications offer the same efficiency and functionality as previous generation devices in a 33 percent smaller footprint.
Vishay Renews Military Analog Switch and Multiplexer Line, Relaunches Hi-Rel DG409 Dual 4-Channel Multiplexer
Vishay announced that its Vishay Siliconix facility in Santa Clara, Calif., has been re-qualified by DSCC to manufacture analog switches and multiplexers with screening to MIL-PRF-38535. The MIL-PRF-38535 specification is a standard that establishes the performance, quality, and reliability requirements for IC components used in systems being built for hi-rel applications.
Vishay Siliconix Releases New Triple-Output Step-Down Controller IC
Vishay has released a new high-performance triple-output step-down controller IC designed for efficient power conversion in set-top boxes, base stations, wall adapters, consumer electronics, and network intermediate bus DC input supplies.
New Vishay Siliconix 60-V SiM400 in 1-mm x 0.6-mm SOT-923 Delivers Space Savings for Small-Signal Applications
Vishay Intertechnology, Inc. today released a 60-V n-channel power MOSFET in the tiny SOT-923 package that will provide dramatic space savings over devices in larger packages such as the SC-70 and SC-89.
Vishay Siliconix - 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area
Vishay today introduced a new 12-V p-channel TrenchFET Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area.
Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8
Vishay Intertechnology has released the first of its monolithic MOSFET and Schottky SkyFET products to use the company’s latest TrenchFET technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V gate drive and 3.8 milliohms at 4.5 V.
Vishay's 20-V P-Channel TrenchFET Power MOSFET claims Industry’s Lowest On-Resistance
Vishay has unveiled a 20V p-channel TrenchFET Gen III power MOSFET with wha is siad to be the lowest on-resistance ever achieved in the PowerPAK 1212-8 type package. With a compact 3.3-mm by 3.3-mm footprint, the device saves space by offering one third the footprint area of the PowerPAK SO-8 or SO-8 type packages.
TrenchFET Power MOSFET in MICRO FOOT Chipscale Package
Vishay has released what it says is the industry's first TrenchFET power MOSFET in the chipscale MICRO FOOT package to feature backside insulation. The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temp...
20-V P-Channel TrenchFET Power MOSFET from Vishay
Vishay Intertechnology has unveiled the first device built on its new p-channel TrenchFET Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
New Vishay Siliconix Medical MOSFETs for Implantable Applications Feature Package Dimensions Down to 1.6 mm by 1.6 mm, On-Resistance to 0.40 Ω
Vishay Intertechnology, Inc. today released two new devices in its industry-first family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical applications.