Search results for "MOSFET"
Nexperia launches new hotswap ASFETs
Nexperia extended its ‘ASFETs for Hotswap and Soft Start’ portfolio with the introduction of 10 new 25V and 30V fully optimised devices, combining enhanced safe operating area (SOA) performance with extremely low RDS(on), making them ideal for use in 12V hotswap applications including data centre servers and communications equipment.
MOSFET, power modules cover circuit configurations
Seven new MOSFET and diode power modules designed specifically for on-board charger applications have been unveiled by Vishay Intertechnology.
Renesas presents wireless power transmitter tech at ISSCC
Renesas announced that the company presented advancements of charging technology for mobile devices at the International Solid-State Circuits Conference (ISSCC) in San Francisco. During the conference, Renesas described its single-chip wireless power transmitter solution that measures AC and DC transmitter power.
Latest GaN FET doubles power density in small form factor, says EPC
GAN power FET and IC provider, Efficient Power Conversion (EPC) launches the EPC2619, its latest GaN FET.
New digital hot-swap and system monitoring controller IC
Infineon introduces the wide voltage range hot-swap controller with a programmable digital SOA control for data centres.
Automotive ASFETs enhance airbag systems
Mouser Electronics is now shipping the BUK9Mx and BUK9Yx automotive ASFETs for airbag applications fromNexperia.
Vishay brings the DNA of tech to electronica
Vishay Intertechnology has announced that at electronica 2022, they will be demonstrating how its portfolio of reliable and energy-efficient electronic components – known as the DNA of tech – is enabling the creation of next-gen products across a variety of sectors.
Infineon QDPAK and DDPAK registered as JEDEC standard
The trends toward higher power density and cost optimisation dominate the development goals of efficient high-power applications that create substantial value for segments such as electromobility. To push these boundaries, Infineon Technologies today announced it has successfully registered its QDPAK and DDPAK top-side cooling (TSC) packages, which are ideal for high-voltage MOSFETs as a JEDEC standard.
Navitas – GaNSense Half-Bridge power IC
GaNSense power ICs use next-generation gallium nitride (GaN) to replace silicon chips to enable 3x faster charging and 3x more power in half the size and weight for mobile chargers.
Cambridge GaN devices announces new Webinar series
Cambridge GaN Devices (CGD) is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity. During this series, CGD's GaN experts will share their insights on GaN for efficient power conversion and how CGD's HV technology, ICeGaN, enables ease of use and delivers the highest performance. In the first instalment, 'Powering up The Future wit...