Search results for "SiC MOSFET"
NMI & IMAPS-UK have announced the line up for their iPower Technical Conference, which takes place at the WMG, University of Warwick on 30 November & 1 December 2011.
The two-day event and networking dinner, supported by Dyson, will focus on how future products can integrate interconnectivity, intelligence and thermal management to better meet the needs of renewable power generation, electric vehicles, smart transportation systems and other applications. Presentations will be given on scenario and application directions; power electronics technology developments; materials and processes; and manufacturing and...
X-REL Semiconductor launches XTRM: a new family of high-temp, extreme reliability electronics components
Following the announcement of the creation of French spin-off X-REL Semiconductor from EASii IC, X-REL introduces XTRM, its High-Reliability / High-Temperature product portfolio dedicated to fields such as Aeronautics & Space, Transportation & Automotive, Harsh Environments, Oil & Gas, Industrial and Geothermal.
Cree GaN HEMT Transistors and MMIC Deliver Industry-Leading Power and Efficiency for S-Band Radar Applications
Cree, Inc. will showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. These products offer the industry’s best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solut...
Microsemi Expands RF Power MOSFET Products Offering
Microsemi Corporation today strengthened its RF power product line with the introduction of the DRF1400 power MOSFET. It is well-suited for use in RF generators for a wide range of industrial, scientific and medical applications including plasma generation for semiconductors, LCD and solar cell manufacturing, and CO2 lasers operating up to 30 megahertz.
SemiSouth lance une gamme de diodes Schottky SiC de puissance comprenant les composants de plus fort courant de l’industrie
SemiSouth Laboratories, Inc., fabricant leader de dispositifs en carbure de silicium (SiC) pour applications de conversion et gestion d’énergie à forte puissance et haut rendement en environnement difficile, introduit une gamme étendue de diodes Schottky de puissance ; cette gamme inclut notamment la diode SDP30S120 de courant nominal de 30 A, qui est le dispositif 1200 V en boîtier TO-247 de plus fort courant de l’industrie.
Des JFET SiC de SemiSouth destinés à l’audio haut de gamme
SemiSouth Laboratories, le fabricant leader de transistors en carbure de silicium (SiC) pour les applications de gestion et de conversion d’énergie à haute puissance et rendement élevé, a lancé une nouvelle famille de JFET SiC économiques présentant une très bonne linéarité qui sont destinés à des applications audio de haut de gamme.
semiSemiSouth introduit le transistor SiC de puissance de plus faible résistance du marché, pour une gestion plus efficace de l’énergie
A 45 mΩ et 1200 V, ce JFET normalement fermé en carbure de silicium offre une commutation extrêmement rapide ; sans courant de queue, les pertes de commutation sont de quatre à dix fois plus basses que les commutateurs 1200 V concurrents
SemiSouth lance une gamme de diodes Schottky SiC de puissance comprenant les composants de plus fort courant de l’industrie
SemiSouth Laboratories, Inc., fabricant leader de dispositifs en carbure de silicium (SiC) pour applications de conversion et gestion d’énergie à forte puissance et haut rendement en environnement difficile, introduit une gamme étendue de diodes Schottky de puissance ; cette gamme inclut notamment la diode SDP30S120 de courant nominal de 30 A, qui est le dispositif 1200 V en boîtier TO-247 de plus fort courant de l’industrie.
Highest output power density inverter uses SiC JFETs from SemiSouth
SemiSouth Laboratories, Inc has announced that silicon carbide JFETs made by the company are being used in small 0.5 litre inverters to achieve an output power density of 30kWh/l. If inverters of this size and capacity are used with PV panels, one inverter could supply enough electricity for up to five households, it is claimed.
New normally-on SiC JFETs from SemiSouth feature ultra low switching losses
SemiSouth Laboratories, Inc. today launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses. Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C.