Search results for "SiC MOSFET"

ATC Semitec's SEFUSE D6X is said to offer a new concept in thermal fuse technology. By combining a thermal fuse element and resistor on a single substrate, NEC has created a fast-acting ultimate protection device for high power DC applications upto 12A/32VDC.

Peregrine Semiconductor Corporation, a fabless provider of high-performance radio-frequency (RF) integrated circuits (ICs), today announced the PE4141 broadband quad MOSFET array core. The PE4141 leverages Peregrine’s UltraCMOS™ technology to deliver a combination of high linearity, strong low-frequency performance, monolithic integration and reliability that is ideal for mixer and multiplexer functions used in magnetic resonance imag...

Renesas introduced today 32 new N-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs) with voltage tolerances of 40 and 55 volts (V). The new power MOSFETs include the NP75N04YUK device, featuring a compact HSON package with one-half the mounting area of the existing TO-252 package and the ability to handle current flows of up to 75 amperes (A).

Renesas Electronics, a premier provider of advanced semiconductor solutions, today announced the development of the RJK0222DNS and RJK0223DNS, two power semiconductor devices with ultra-compact packages for use in DC/DC converters (Note 1) that provide power to the MCU/CPU, memory, and other circuit blocks of products such as servers and notebook PCs.

Les concepteurs font face au défi de la conception d'un circuit isolé (flyback) pour leur alimentation électrique et rêvent de voir leur tâche simplifiée. Fairchild Semiconductor un des principaux fournisseurs de circuits de puissance et mobiles de hautes performances, présente Power Supply WebDesigner (PSW), un outil de simulation en-ligne puissant et facile à utiliser permettant aux concepteurs de mettre leur note d'application au feu e...

Broad Portfolio Simplifies Supply Chain Complexity; Value-Added Solutions Achieve High-Efficiency System Performance With the increasing popularity of LED lighting applications, designers face challenges ranging from design complexity and the need for high system efficiency to limited PCB space and the management of multiple vendors to meet all of their design requirements.

As the mobile handset market continues to grow and smartphone usage and market growth become significantly more prevalent, designers are challenged to add functionality while reducing the form factor and components in the overall design. Responding to customer needs and these trends, Fairchild Semiconductor developed the FDZ3N513ZT – an N-Channel and Schottky diode combination in a small 1mm x 1mm footprint.

Cell phone chargers typically sit plugged in and unused most of the time. Yet, they still draw power from the grid, wasting energy and the consumer’s money. The problem facing design engineers is clear – how can standby power be reduced in these devices, thereby saving energy, meeting government regulations and saving the consumer money?

Fairchild Semiconductor’s MicroFET thin package helps designers avoid compromising their designs by providing them with an industry-leading low profile package. Working with design engineers and procurement managers, Fairchild developed an integrated P-Channel PowerTrench MOSFET and Schottky diode, as a single-package solution to meet critical efficiency and thermal needs in battery charging and power-multiplexing applications.

Fairchild Semiconductor has introduced the FDD8424H , a complementary 40V MOSFET that provides Dual DPAK packaging and industry-leading thermal dissipation to increase system reliability, reduce board space and decrease overall system cost. Optimized for half- or full-bridge inverter designs, the FDD8424H is ideal for use in backlighting units (BLU) for LCD TVs, LCD monitors, motor drives and lamp drives.