Search results for "igbt"
IGBT power interfaces with integrated electro-optic conversion
A range of miniaturised power interfaces with integrated electro-optical conversion has been developed by HARTING which enables customers to save time and money by combining electrical connectivity and optical transmission in the same module.The new interfaces are designed for use with powerful electric drives controlled by IGBT (insulated gate bipolar transistor) semiconductor elements. In order to achieve the necessary galvanic isolation betwee...
Power modules maximise converter system efficiency
With ACEPACK, ST Microelectronics has launched a series of adaptable, compact and easier package power modules. They are perfectly suited for simple, efficient and rugged industrial motor designs up to 30kW. The power modules are now available in two versions, ACEPACK 1 and ACEPACK 2, at www.Rutronik24.com.
Highest power density designed for IGBT in surface mounting
Infineon Technologies has expanded its product portfolio of the thin-wafer technology TRENCHSTOP5 IGBT. The new product family is offering up to 40A 650V IGBT, co-packed with a full rated 40A diode in a surface mounting TO-263-3 also known as D2PAK. The new TRENCHSTOP 5 IGBT in D2PAK package serves the growing demand for higher power density in power devices for automated surface mounted assembly.
Cascode Basics
A ‘cascode’ sounds like an archaic term from the era of vacuum tubes and that’s where it comes from. Cascodes today, though, are very relevant in their latest incarnation as combinations of SiC JFETs and Si MOSFETs, giving performance that’s getting very close to the suitable switch. Guest blog byZhongda Li, NPI Manager at UnitedSiC.
Panasonic showcases GaN and SiC MOSFET advances
GaN and SiC MOSFET technologies for industrial and automotive use were a focal point of the Panasonic Industry Europe (PIEU) display at PCIM 2018.
Gate-driver ICs now available with AEC-Q100 certification
In Nuremburg, Germany at this year's PCIM show, Power Integrations announced that two of its SCALE-iDriver gate-driver IC family are now certified to AEC-Q100 Grade Level 1 for automotive use. The SID1132KQ and SID1182KQ are suitable for driving 650, 750 and 1,200V automotive IGBT and SiC-MOSFET modules, and are rated for peak currents of +/-2.5A and +/-8A.
CoolSiC Schottky diodes: combining performance and robustness
At this year’s PCIM Europe trade fair in Nuremberg, Infineon Technologies AG presents the first products of its automotive Silicon Carbide portfolio: the CoolSiCSchottky diode family is now ready for current and future on-board charger (OBC) applications in hybrid and electric vehicles. Infineon has designed the diodes specifically to meet the high requirements of the automotive industry regarding reliability, quality and performance.
UPS systems supporting five football stadiums of 2018 World Cup
Delta has announced the strong track record of its uninterruptible power supply (UPS) systems in Russia have been recently implemented to provide enhanced reliability and energy efficiency to various mission critical applications in five of the football stadiums selected to host the 2018 FIFA World Cup Russia.
SiC MOSFET and schottky barrier diode portfolio expanded
Microsemi has announced it will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-gen 1,200V, 25 and 80Ω SiC MOSFET devices; next-gen 700V, 50A Schottky Barrier Diode (SBD) and corresponding die. These SiC solutions, along with other recently announced devices in the SiC SBD/MOSFET product families, will be demonstrated 5th-7th Junein hall 6, booth 318 at PCIM Eu...
Driving leading-edge SiC/GaN power converters
To take advantage of the new power switch technologies, a complete ecosystem of ICs must be implemented in converter design, starting with the gate driver, says Stefano Gallinaro, Analog Devices and Imad Owaineh, Watt&Well