Search results for "gallium nitride"

Navitas Semiconductor has announced the NV6128, a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics market, and take market share from the old, slow, silicon chip.

The end of Moore’s law has been signaled for some time, but without a doubling of the number of transistors, battery-powered mobile devices rely on it to increase computing complexity. Gordon Allan offers a survival guide to life outside Moore’s law

The performance of GaN devices in 48V applications extends their use to high performance servers.

Peters has developed ELPEGUARD thick-film coating twin-cure DSL 1602 FLZ/400 in particular for UV LED curing at a wavelength of 395nm. The coating will be curing within seconds with an energy of 1,500mJ/cm² and a capacity of 1500 mW/cm².

Texas Instruments has expanded its high voltage power management portfolio with the next generation of 650V and 600V Gallium Nitride (GaN) Field-Effect Transistors (FETs) for automotive and industrial applications.

To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) has announced the appointment of Stefan Werkstetter asDirector, Sales EMEA.

Up to 40% of a vegetable crop can go to waste due to the aesthetic requirements of some supermarkets. While a wonky vegetable may not be the most visually pleasing, it possesses the same nutritional value as its perfectly proportioned counterpart.Here, Chris Johnson, Managing Director ofSMB Bearings, explains why not all bearing surface damage should cause alarm and future headaches for offshore oil and gas plant managers.

Under the motto 'We are the link between the real and the digital world', Infineon Technologies is launching its trade show offerings for electronica 2020 on the Internet. For the first time, the Cypress product portfolio will also be on display here. Interested parties can register on the Infineon website and will have the opportunity to obtain comprehensive information about new products, application solutions and market trends from 10thNovembe...

Power Integrations has announced the MinE-CAP IC for high power density, universal input AC/DC converters. By halving the size of the high-voltage bulk electrolytic capacitors required in offline power supplies, this new type of IC enables a reduction in adapter size of up to 40%. The MinE-CAP device also reduces in-rush current making NTC thermistors unnecessary, increasing system efficiency and reducing heat dissipation.

NXP Semiconductors has announced the grand opening of its 150mm RF Gallium Nitride fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP’s expertise in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aero...