Search results for "SiC MOSFET"

Vishay today introduced a new dual 20 V p-channel TrenchFET Gen III power MOSFET with an 8 V gate-to-source voltage featuring the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.

Vishay announced an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile, thermally enhanced PowerPAK MLP 6x6 40-pin package.

Vishay released two new 100 V n-channel TrenchFET power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay's new ThunderFET® technology, the SiR870DP and Si4190DY offer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. In addition, the product of on-resistance and gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications...

Vishay Intertechnology, Inc. estimates its 2010 design-in potential to be $1.4 billion. Almost 13 percent of this — nearly $170 million — comes from alternative and sustainable energy designs. This is driven by the development of ever-smaller, highly efficient passive components and semiconductors as well as their integration into Green Energy solutions (alternative energies — wind, solar, and tidal energy, among others) and energy efficien...

Vishay Intertechnology will present all its new electronics components at booth A5.143. Special focus is set on the Super12 featured products. The line-up of components features industry-leading specs such as capacitance-voltage, current rating, and on-resistance. These innovative products are ideal for use in several key applications and provide a cross-section of Vishay’s very broad product portfolio.

Intepro Systems has announced the availability of its new power semiconductor test system, SEMTest. SEMTest is a user configurable stress-screening system able to perform accelerated lifetime testing of power semiconductors and modules incorporating IGBT, MOSFET, SCR, diode and bipolar parts. The system is ideal for both manufacturers and users of power semiconductors who want to qualify commercial off the shelf devices for use in high reliabilit...

ON Semiconductor, continues to expand its portfolio of products to simplify and speed the design of computing platforms. “Our strategy continues to focus on developing products that enable computer OEMs to simplify their design and speed development while reducing overall power consumption and saving board space,” said Bill Schromm, ON Semiconductor senior vice president and general manager of Computing and Consumer Products. “O...

CISSOID, leader des solutions semi-conducteurs pour les applications à haute température et haute fiabilité, annonce THEMIS et ATLAS, leur jeu de puces de commande de transistors de puissance, destinés aux convertisseurs de puissance et commandes de moteurs à haute efficacité. THEMIS et ATLAS ont été spécialement développés pour la commande sans complications des commutateurs de puissance les plus avancés, en ce compris les MOSFET...

CISSOID, the leader in high temperature semiconductor solutions, introduced a new product in their PLANET family of high temperature transistors and switches. MARS is a High Temperature 30V Small-Signal P-channel MOSFET transistor suitable for long term reliable operation from -55°C up to +225°C. With its extreme temperature robustness, its input capacitance of only 14pF and its gate leakage limited to 400nA at 225°C, this 30V transistor is id...

CISSOID introduced a dual High Temperature 40V N-channel MOSFET Transistor. Available in the small footprint, surface mounting, hermetically sealed ceramic SOIC16 package, this new device will help designers to achieve the highest system density. It can switch currents up to 2A and provides a fully reliable solution for continuous operation over the same temperature range as all CHT products from CISSOID: from -55°C to +225°C.