Search results for "SiC MOSFET"

Vishay Intertechnology, Inc. today announced an integrated DrMOS solution providing PWM-optimized high-side and low-side n-channel MOSFETs, a full-featured MOSFET driver IC, and a bootstrap diode, all in a single low-profile PowerPAK MLP 6x6 40-pin package. The new SiC762CD is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and other high-pow...

Vishay Intertechnology will be presenting 39 different product demonstrations at electronica 2008. The demonstrations will highlight performance characteristics of a number of Vishay discrete semiconductors and passive electronic components.

Vishay today announced its “Super 12” featured products for 2010. The line-up of components features industry-leading specs, such as capacitance-voltage, current rating, and on-resistance.

The European distributor ECOMAL has introduced the first Schottky barrier rectifiers from Vishay Technology which use trench MOS technology. These devices appear in the equivalent circuit diagram as an MOS element and Schottky metal in parallel. New environmental guidelines including EUP (Energy – Using – Products 2005/32/EC), which are intended to save as much energy as possible and minimize the tolerable losses in the overall system, requir...

Vishay announced that it has expanded its family of MIL-PRF-38535-screened analog switches and multiplexers with the release of the hi-rel DG408, an 8-channel, single-ended analog multiplexer. In June 2010 the Vishay Siliconix facility in Santa Clara, Calif., was re-qualified by DSCC to manufacture analog switches and multiplexers with screening to MIL-PRF-38535. The MIL-PRF-38535 specification is a standard that establishes the performance, qu...

Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of a new 20-V n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK SO-8 package type.

Vishay Intertechnology, Inc. today expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 25-V n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.

Vishay is broadening its optocoupler portfolio with the two new IGBT and MOSFET drivers. Released today, the 2.5A VO3120 and 0.5A VO3150A combine the widest operating voltage with high ambient operating temperature ranges and low power consumption to enable better thermal management and more flexible design choices for motor drives, induction stove tops, power supplies, and many other high-voltage applications.

Vishay unveiled the first TrenchFET power MOSFET built on a new low-on-resistance technology optimized for higher-voltage devices. The new ThunderFET SiR880DP is the first 80-V power MOSFET with an on-resistance rating at a 4.5-V gate drive. Packaged in the thermally enhanced PowerPAK® SO-8, the new 80 V SiR880DP offers ultra-low on-resistances of 8.5 mΩ at 4.5 V, 6.7 mΩ at 7.5 V, and 5.9 mΩ at 10 V. Typical on-resistance times g...

Vishay introduced a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices. Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63 ns and Qrr of 114 nC, with an improved gate charge of 34 nC.