Search results for "gallium nitride"

Keysight Technologies andTransphorm, a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products, have announced the availability of a new power supply reference design that enables engineers to identify and correct design errors before building hardware, thereby lowering product costs and speeding time to market.

X-FAB Silicon Foundries has introduced a new embedded Flash memory capability for its XP018 high-voltage automotive process. This new Flash IP leverages X-FAB’s already widely proven Silicon Oxide Nitride Oxide Silicon (SONOS) technology, which offers a combination of elevated levels of performance and best-in-class reliability.

The embedded electronics development community is currently experiencing the biggest changes in our industry since the creation of the IC, argues Khagendra Thapa.

Imec and AIXTRON have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1,200V applications on 200mm QST substrates, with a hard breakdown exceeding 1,800V. The manufacturability of 1,200V-qualified buffer layers opens doors to highest voltage GaN-based power applications such as electric cars, previously only with feasible silicon-carbide (SiC)-based technology.

BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC/DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN) FET transistors.

STMicroelectronics has extended the MasterGaN family with the introduction of a high power density 600V half bridge driver with two enhancement mode GaN devices optimised for asymmetrical topologies.

The OPB850A family of optical flag sensors from TT Electronics – Optek are now available from distributor TTI.

Efficient Power Conversion has advanced the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suited for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters.

Graphene Flagship researchers have reported a new method to integrate graphene and 2D materials into semiconductor manufacturing lines, a milestone for the initiatives recently launched2D Experimental Pilot Line (2D-EPL)- a €20m project to bridge the gap between lab-scale manufacturing and large volume production of electronic devices based on two-dimensional materials.

Given the exciting properties, graphene has always been linked as a revolutionary material for the electronics industry. CVD graphene is cited as the ideal solution in providing a perfect single layer produced in a low cost continuous R2R process, but the manufacturing and commercial reality have proved very different. After a long period of research, and with players regularly exiting and entering the field, we are only now starting to see this ...