Search results for "MOSFET"

Today’s 3.3kW switched-mode power supplies (SMPS) can achieve power densities of 100W/inch³ by utilising the latest technologies, including superjunction (SJ silicon) and silicon carbide (SiC) power MOSFETs in the totem-pole PFC stage as well as gallium nitride (GaN) power switches for high-voltage DC-DC stage operation.

onsemi, a specialist in intelligent power and sensing technologies, has announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost.

Renesas Electronics Corporation announced a new automotive Intelligent Power Device (IPD) that they assert will safely and flexibly control power distribution within vehicles, addressing the requirements of next-generation E/E (electrical/electronic) architectures.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will continue to demonstrate its focus and 100% commitment to the burgeoning GaN market via a powerful presence at the upcoming PCIM conference and exhibition in Nuremberg, May 9th – 11th.

ROHM has developed a 12W-rated metal plate shunt resistor (PSR350). It is optimised for high-power applications in the automotive and industrial equipment markets. ROHM will also expand the PSR line-up to include a 0.2mΩ (PSR100) model along with a 15W type (PSR330).

onsemi has announced a long-term supply agreement (LTSA) between the two companies.

Mouser Electronics has signed a global distribution agreement with Navitas Semiconductor, a pure-play, next-generation power semiconductor company.

STMicroelectronics has introduced five power-semiconductor bridges in popular configurations, housed in ST’s advanced ACEPACK SMIT package that eases assembly and enhances power density over conventional TO-style packages.

Cambridge GaN Devices (CGD) has announced the third in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices.

Vishay Intertechnology has introduced a 4th-gen 600V EF Series fast body diode MOSFET in the low profile PowerPAK 10 x 12 package.