Search results for "gallium nitride"

The LMG3100 device is a 100V continuous, 120V pulsed, 126A Gallium Nitride (GaN) FET with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver.

Innoscience has firmly denounced the baseless accusations of patent infringement by Infineon Technologies AG.

Infineon has introduced a new series of microcontrollers (MCUs) for next-generation industrial and consumer motor control as well as power conversion system applications.

Gallium Nitride (GaN) is presently in a position that will see it, alongside Silicon Carbide (SiC), revolutionise power supply design as a whole, moving away from traditional purely silicon (Si)-based analogue designs. So how is this design revolution happening, and where is GaN having the most impact?

Infineon has expanded the Innoscience lawsuit pending before the District Court for the Northern District of California on 23 July 2024, adding claims against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and based on the infringement of three additional patents referring to gallium nitride (GaN) technology owned by Infineon. In addition, Infineon has filed a complaint with the U.S. International Trade Commission (U...

As the automotive industry transitions to electric vehicles (EVs) and away from traditional CO₂-producing cars and vans, several fundamental obstacles must be overcome from a vehicle development point of view, to make EVs even more attractive to the consumer.

It could be argued that the power requirement for data centres is getting out of hand. If you look back even just a few years, the accepted demand to drive CPUs and typical servers was 10 to 15 kilowatts per rack. But now – driven by the voracious appetite of high-performance GPUs used in generative AI – the expectation is that 100kW/rack will be needed…indeed some customers are talking about 200kW/rack. Couple this massive ord...

This reference design is a gallium nitride (GaN) based, 140W AC-DC power with high efficiency and power density. It supports wide input (90VACto 264VAC) and output (5V to 28V) voltages. It is designed for the application, such as the adaptor design for USB PD3.1 and the charger for power tools.

Efficient Power Conversion(EPC), a rapidly growing and innovative company, announces that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months.

GlobalFoundries has acquired Tagore Technology’s proprietary and production proven Power Gallium Nitride (GaN) IP portfolio.